Epitaxial lift-off monocrystalline CdTe/MgCdTe double heterostructures and proton radiation study for space applications

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

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Proton Irradiation of 4H-SiC Ultraviolet Single Photon Avalanche Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.551 ◽

2011 ◽

Vol 679-680 ◽

pp. 551-554

Author(s):

D. Kurt Gaskill ◽

Jun Hu ◽

X. Xin ◽

Jian Hui Zhao ◽

Brenda L. VanMil ◽

...

Keyword(s):

Proton Irradiation ◽

Detection Efficiency ◽

Single Photon ◽

Photon Counting ◽

Chemical Vapor ◽

Single Photon Detection ◽

Proton Radiation ◽

Space Applications ◽

Single Photon Counting ◽

Avalanche Diodes

The effects of proton irradiation on uv 4H-SiC single photon avalanche photodiodes (SPADs) are reported. The SPADs, grown by chemical vapor deposition, were designed for uv operation with dark count rates (DCR) of about 30 kHz and single photon detection efficiency (SPDE) of 4.89%. The SPADs were irradiated with 2 MeV protons to a fluence of 1012 cm-2. After irradiation, the I-V characteristics show forward voltage (<1.9 V) generation-recombination currents 2 to 3 times higher than before irradiation. Single photon counting measurements imply generation-recombination centers created in the band gap after irradiation. For threshold voltage ranging from 23 to 26 mV, the 4H-SiC SPAD showed low DCR (<54 kHz) and high SPDE (>1%) after irradiation. The SPADs demonstrated proton radiation tolerance for geosynchronous space applications.

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Thin-film GaAs epitaxial lift-off solar cells for space applications

Progress in Photovoltaics Research and Applications ◽

10.1002/pip.616 ◽

2005 ◽

Vol 13 (7) ◽

pp. 587-596 ◽

Cited By ~ 37

Author(s):

J. J. Schermer ◽

P. Mulder ◽

G. J. Bauhuis ◽

P. K. Larsen ◽

G. Oomen ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Space Applications ◽

Lift Off

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Proton radiation testing of digital micromirror devices for space applications

Optical Engineering ◽

10.1117/1.oe.52.9.091807 ◽

2013 ◽

Vol 52 (9) ◽

pp. 091807 ◽

Cited By ~ 6

Author(s):

Kenneth Fourspring ◽

Zoran Ninkov ◽

Bryan C. Fodness ◽

Massimo Robberto ◽

Sally Heap ◽

...

Keyword(s):

Proton Radiation ◽

Space Applications ◽

Radiation Testing ◽

Digital Micromirror Devices

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Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells

10.1117/12.2208804 ◽

2016 ◽

Cited By ~ 2

Author(s):

Yongkun Sin ◽

Mark Peterson ◽

Zachary Lingley ◽

Stephen LaLumondiere ◽

Steven C. Moss ◽

...

Keyword(s):

Solar Cells ◽

Carrier Dynamics ◽

Double Heterostructures ◽

Lift Off

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A gamma, x-ray and high energy proton radiation-tolerant CIS for space applications

2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers ◽

10.1109/isscc.2009.4977297 ◽

2009 ◽

Cited By ~ 11

Author(s):

L. Carrara ◽

C. Niclass ◽

N. Scheidegger ◽

H. Shea ◽

E. Charbon

Keyword(s):

High Energy ◽

Proton Radiation ◽

High Energy Proton ◽

Space Applications ◽

X Ray ◽

Energy Proton ◽

Radiation Tolerant

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EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES

Journal of Circuits System and Computers ◽

10.1142/s0218126613400264 ◽

2013 ◽

Vol 22 (10) ◽

pp. 1340026 ◽

Cited By ~ 1

Author(s):

GUOXUAN QIN ◽

JIANGUO MA ◽

NINGYUE JIANG ◽

ZHENQIANG MA ◽

PINGXI MA ◽

...

Keyword(s):

High Temperature ◽

Liquid Nitrogen ◽

Silicon Germanium ◽

Communication Systems ◽

Extreme Temperature ◽

Liquid Nitrogen Temperature ◽

Junction Temperature ◽

Proton Radiation ◽

Extreme Temperatures ◽

Space Applications

The performances of proton irradiated silicon–germanium (SiGe) power heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature and high stage-temperature of 120°C with junction temperature over 160°C) are reported in this work. SiGe power HBTs with total emitter area of ~ 1460 μm2 are fabricated in a commercial BiCMOS process, and irradiated with proton at different fluences from 1 × 1012 p/cm2 to 5 × 1013 p/cm2. Experimental characterizations are conducted for pre- and post-radiation devices at room temperature, cryogenic temperature and high temperature. The results demonstrate that the proton-irradiated SiGe power HBTs are naturally suitable for electronic operations at extreme temperatures. Specifically, investigation of proton radiation on SiGe power HBTs at liquid nitrogen temperature (77 K) indicates a significant potential for space applications. In addition, SiGe power HBTs show better tolerance of proton radiation at high temperature of 120°C (junction temperature over 160°C). SiGe power HBTs demonstrate great potential in power amplification for wireless communication systems under severe radiation and extreme temperature environment (cryogenic and high temperatures) even without any intentional radiation hardening.

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