Advanced X-ray diffraction metrology as a means of improving semiconductor device reliability

2013 ◽  
Author(s):  
Bruce Gittleman
Keyword(s):  
Semiconductor Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Reliability ◽  
Semiconductor Device Reliability

Measurement of Relaxation in Strained Layer Semiconductor Structures

1989 ◽  
Vol 33 ◽  
pp. 61-66 ◽  
Author(s):  
Mary A. G. Halliwell
Keyword(s):  
Semiconductor Device ◽  
Nondestructive Method ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Semiconductor Structures ◽  
Cubic Materials ◽  
Heteroepitaxial Layers

Many advanced semiconductor device designs require the growth of heteroepitaxial layers with lattice parameters differing by up to a few percent with respect to the substrate. X-ray diffraction offers a nondestructive method of determining the extent of relaxation. This paper discusses the sensitivity of x-ray techniques to small amounts of relaxation, describes how relaxation is measured in cubic materials for layer on (001) substrates and suggests nomenclature for the case of asymmetric relaxation.

Mosaic Crystal Model for Dynamical X-Ray Diffraction from Step-Graded InxGa1-xAs and InxAl1-xAs/GaAs (001) Metamorphic Buffers and Device Structures

2017 ◽  
Vol 26 (03) ◽  
pp. 1740019
Author(s):  
P. B. Rago ◽  
J. E. Ayers
Keyword(s):  
Semiconductor Device ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
X Ray Diffraction ◽  
General Applicability ◽  
X Ray ◽  
Device Structures ◽  
Mosaic Crystal ◽  
Crystal Model ◽  
Metamorphic Buffers

In this paper we apply a mosaic crystal model for dynamical x-ray diffraction to step-graded metamorphic semiconductor device structures containing dislocations. This model represents an extension of the previously-reported phase-invariant model, which is broadly applicable and serves as the basis for the x-ray characterization of metamorphic structures, allowing determination of the depth profiles of strain, composition, and dislocation density. The new model has more general applicability and is more appropriate for step-graded metamorphic device structures, which are of particular interest for high electron mobility transistors and light emitting diodes. Here we present the computational details of the mosaic crystal model and demonstrate its application to step-graded InxGa1-xAs/GaAs (001) and InxAl1-xAs/GaAs (001) metamorphic buffers and device structures.

Improved Semiconductor Device Reliability from Plasma Dicing

2019 ◽  
Author(s):  
R. Barnett ◽  
Janet Hopkins ◽  
Stewart Fulton ◽  
Oliver Ansell ◽  
Samira Kazemi ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Device Reliability ◽  
Semiconductor Device Reliability

Quantitative SiGe TEM Elemental Analysis in FinFET Test Structures

2015 ◽  
Author(s):  
James Demarest ◽  
John Bruley
Keyword(s):  
Silicon Germanium ◽  
Semiconductor Device ◽  
Three Dimensional ◽  
Test Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Scaling ◽  
Transmission Electron ◽  
Calibration Samples ◽  
Performance Gains

Abstract As semiconductor device scaling continues to reduce the structure size, device geometries are also changing to three dimensional structures such as finFETs, and the materials which compose the devices are also evolving to obtain additional device performance gains. The material change studied in this paper is the introduction of silicon germanium into the electrically active region of a finFET test structure. The paper demonstrates a quantitative energy dispersive X-ray spectroscopy transmission electron microscopy (TEM) technique through the use of blanket film calibration samples of known concentration characterized by X-ray diffraction. The technique is used to identify a test structure issue which could only be diagnosed with a technique having nanometer spatial resolution and atomic percent sensitivity. The results of the test structure analysis are independently verified by the complementary TEM electron energy loss spectroscopy technique.

High Resolution Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier
Keyword(s):  
Defect Structure ◽  
Semiconductor Device ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
Crystalline Materials ◽  
Digital Implementation ◽  
X Ray ◽  
Rapid Characterization ◽  
Non Destructive

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.

Silicon Wafer Orientation Dependence of Metal Oxide Semiconductor Device Reliability

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 500-504 ◽  
Author(s):  
Kou Nakamura ◽  
Kazuyuki Ohmi ◽  
Kazuma Yamamoto ◽  
Koji Makihara ◽  
Tadahiro Ohmi
Keyword(s):  
Metal Oxide ◽  
Silicon Wafer ◽  
Semiconductor Device ◽  
Orientation Dependence ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Device Reliability ◽  
Semiconductor Device Reliability ◽  
Wafer Orientation
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