A heterojunction device operated as a self-powered photodetector and its spectral response obtained by a Neon-gas microplasma used as a spectral lamp

Author(s):  
Zhen Gao ◽  
Siva Shivothathaman ◽  
Vassili Karanassios
2021 ◽  
Author(s):  
Oday A. Hammadi

Abstract In this work, a multilayer design for the TiO2/NiO heterojunction device is proposed. In this design, layers of TiO2 nanostructures are consecutively deposited on layers of NiO nanostructures deposited on ITO substrates. This design was compared to the conventional design of thin film TiO2/NiO heterojunction device by measuring the spectral response of both designs in the spectral range of 200–1200 nm. The proposed design showed increased response intensity by 14%, narrowing spectral width by 23% and single peak of response at 440nm.


2021 ◽  
pp. 014459872110368
Author(s):  
Ali Aldalbahi ◽  
Tansir Ahamad ◽  
Saad M Alshehri ◽  
Zhen-Bo Wang ◽  
Peter X. Feng

Research in the physical sciences is critical to the development of new materials technologies for clean energy. Aims in the present work are to synthesise and characterise three-dimensional architectures composed of two-dimensional atomic layer molybdenum disulphide for solar cells and self-powered photodetectors with improved performance. Nanostructured molybdenum disulphide was prepared by using a spin coating method with controlled process times. Prior to each deposition, the layer was dried with hot air for 5 min. A rough, irregular and clustered surface type was generated when the number of spin coating runs was increased. This type of surface was consistent with the morphologies expected for two-dimensional atomic layer molybdenum disulphide in three-dimensional architectures. The nanoscale morphologies, composites, and electronic properties of molybdenum disulphide were examined using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and micro-Raman scattering spectroscopy, respectively. Moreover, three-dimensional architecture-based prototypes for solar cells and self-powered photodetectors were designed, fabricated and tested. In photovoltaic mode, the obtained responsivity and response speed were almost 10 times larger and 20 times faster, respectively, than those recently reported for a single monolayer molybdenum disulphide-based self-powered prototype. In addition, the effects of bias, heat, humidity and a static field on the generated photocurrent and the response time were evaluated. It is expected that the newly designed prototype will exhibit exceptional properties: a broadband spectral response, a high signal-to-noise ratio and excellent stability.


2018 ◽  
Vol 735 ◽  
pp. 2491-2496 ◽  
Author(s):  
Duo Chen ◽  
Lin Wei ◽  
Dong Wang ◽  
Yanxue Chen ◽  
Yufeng Tian ◽  
...  

2021 ◽  
Author(s):  
Sahin Sorifi ◽  
Shuchi Kaushik ◽  
Rajendra Singh

We have devised a vertical self-powered GaSe/Si based 2D/3D p–n heterojunction device for a high-performance photodetection application.


2021 ◽  
Author(s):  
Qinghai Zhu ◽  
Peng Ye ◽  
Youmei Tang ◽  
Xiaodong Zhu ◽  
Zhiyuan Cheng ◽  
...  

Abstract Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A/W and a specific detectivity of 1.51 × 1012 Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A/W and 2.60 × 1012 Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.


1979 ◽  
Vol 44 ◽  
pp. 41-47
Author(s):  
Donald A. Landman

This paper describes some recent results of our quiescent prominence spectrometry program at the Mees Solar Observatory on Haleakala. The observations were made with the 25 cm coronagraph/coudé spectrograph system using a silicon vidicon detector. This detector consists of 500 contiguous channels covering approximately 6 or 80 Å, depending on the grating used. The instrument is interfaced to the Observatory’s PDP 11/45 computer system, and has the important advantages of wide spectral response, linearity and signal-averaging with real-time display. Its principal drawback is the relatively small target size. For the present work, the aperture was about 3″ × 5″. Absolute intensity calibrations were made by measuring quiet regions near sun center.


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