ISFET Digital Readout Circuit With An On-Chip MIPS Processor

Author(s):  
Shaghayegh Aslanzadeh ◽  
Ava Hedayatipour ◽  
Nicole McFarlane
2007 ◽  
Vol 7 (9) ◽  
pp. 1225-1232 ◽  
Author(s):  
Andrew Mason ◽  
Abhijeet V. Chavan ◽  
Kensall D. Wise

2015 ◽  
Vol 15 (7) ◽  
pp. 3893-3902 ◽  
Author(s):  
Bo Liu ◽  
Zaniar Hoseini ◽  
Kye-Shin Lee ◽  
Yong-Min Lee

1999 ◽  
Vol 76 (1-3) ◽  
pp. 273-278 ◽  
Author(s):  
Ph.A. Passeraub ◽  
P.-A. Besse ◽  
A. Bayadroun ◽  
S. Hediger ◽  
E. Bernasconi ◽  
...  

Author(s):  
Defu Wang ◽  
Klaus Schmalz ◽  
Mohamed H Eissa ◽  
Johannes Borngraber ◽  
Maciej Kucharski ◽  
...  

2015 ◽  
Vol 25 (01) ◽  
pp. 1640006
Author(s):  
Suyan Fan ◽  
Man-Kay Law ◽  
Mingzhong Li ◽  
Zhiyuan Chen ◽  
Chio-In Ieong ◽  
...  

In this paper, a wide input range supply voltage tolerant capacitive sensor readout circuit using on-chip solar cell is presented. Based on capacitance controlled oscillators (CCOs) for ultra-low voltage/power consumption, the sensor readout circuit is directly powered by the on-chip solar cell to improve the overall system energy efficiency. An extended sensing range with high sensing accuracy is achieved using a two-step successive approximation register (SAR) and delta-sigma ([Formula: see text]) analog-to-digital (A/D) conversion (ADC) scheme. Digital controls are generated on-chip using a customized sub-threshold digital standard cell library. Systematic error analysis and optimization including the finite switch on-resistance, buffer input-dependent delay, and SAR quantization nonlinearity are also outlined. High power supply rejection ratio (PSRR) is ensured by using a pseudo-differential topology with ratiometric readout. The complete sensing system is implemented using a standard 0.18[Formula: see text][Formula: see text]m complementary metal-oxide-semiconductor (CMOS) process. Simulation results show that the readout circuit achieves a wide input range from 1.5[Formula: see text]pF to 6.5[Formula: see text]pF with a worst case PSRR of 0.5% from 0.3[Formula: see text]V to 0.42[Formula: see text]V (0.67% from 0.3[Formula: see text]V to 0.6[Formula: see text]V). With a 3.5[Formula: see text]pF input capacitance and a 0.3[Formula: see text]V supply, the [Formula: see text] stage achieves a resolution of 7.1-bit (corresponding to a capacitance of 2.2[Formula: see text]fF/LSB) with a conversion frequency of 371[Formula: see text]Hz. With an average power consumption of 40[Formula: see text]nW and a sampling frequency of 47.5[Formula: see text]kHz, a figure-of-merit (FoM) of 0.78[Formula: see text]pJ/conv-step is achieved.


2011 ◽  
Vol 19 (19) ◽  
pp. 18593 ◽  
Author(s):  
T. Ortlepp ◽  
M. Hofherr ◽  
L. Fritzsch ◽  
S. Engert ◽  
K. Ilin ◽  
...  

2019 ◽  
Vol 29 (04) ◽  
pp. 2050061
Author(s):  
R. Nagulapalli ◽  
K. Hayatleh ◽  
S. Barker ◽  
A. A. Tammam ◽  
F. J. Lidgey ◽  
...  

This paper describes a technique to detect blood cell levels based on the time-period modulation of a relaxation oscillator loaded with an Inter-Digitated Capacitor (IDC). A digital readout circuit has been proposed to measure the time-period difference between the two oscillators loaded with samples of healthy and (potentially) unhealthy blood. A prototype circuit was designed in 65-nm CMOS technology and post-layout simulations show 15.25-aF sensitivity. The total circuit occupies 2,184-[Formula: see text]m2 silicon area and consumes 216[Formula: see text][Formula: see text]A from a 1-V power supply.


2014 ◽  
Vol 8 (1) ◽  
pp. 65-72 ◽  
Author(s):  
Baojun Liu ◽  
Li Cai ◽  
Jing Zhu ◽  
Qiang Kang ◽  
Mingliang Zhang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document