Flexible product code-based ECC schemes for MLC NAND Flash memories

2011 IEEE Workshop on Signal Processing Systems (SiPS) ◽

10.1109/sips.2011.6088985 ◽

2011 ◽

Author(s):

C. Yang ◽

Y. Emre ◽

C. Chakrabarti ◽

T. Mudge

Keyword(s):

Flash Memories ◽

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Product Code Schemes for Error Correction in MLC NAND Flash Memories

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2011.2174389 ◽

2012 ◽

Vol 20 (12) ◽

pp. 2302-2314 ◽

Author(s):

Chengen Yang ◽

Yunus Emre ◽

Chaitali Chakrabarti

Keyword(s):

Error Correction ◽

Flash Memories ◽

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A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3072298 ◽

2021 ◽

pp. 1-1

Author(s):

S. Gerardin ◽

M. Bagatin ◽

A. Paccagnella ◽

S. Beltrami ◽

A. Costantino ◽

...

Keyword(s):

Ion Beam ◽

Heavy Ion ◽

Flash Memories ◽

Beam Monitor ◽

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Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.064306 ◽

2014 ◽

Vol 53 (6) ◽

pp. 064306 ◽

Author(s):

Ju Tae Ryu ◽

Sung Hwan Jang ◽

Tae Whan Kim

Keyword(s):

Electrical Characteristics ◽

Dielectric Structure ◽

Coupling Ratio ◽

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Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c062 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C062 ◽

Author(s):

Myounggon Kang ◽

Ki-Tae Park ◽

Youngsun Song ◽

Soonwook Hwang ◽

Byung Yong Choi ◽

...

Keyword(s):

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Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories

2010 IEEE Radiation Effects Data Workshop ◽

10.1109/redw.2010.5619508 ◽

2010 ◽

Author(s):

Duc N. Nguyen ◽

Farokh Irom

Keyword(s):

High Density ◽

Flash Memories ◽

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Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

IEEE Electron Device Letters ◽

10.1109/led.2021.3121213 ◽

2021 ◽

pp. 1-1

Author(s):

Yu-Heng Liu ◽

Yu-Siang Yang ◽

Chih-Yuan Tseng ◽

Wei Lin ◽

An-Chang Liu ◽

...

Keyword(s):

Data Retention ◽

Flash Memories ◽

Single Level ◽

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A 12 V Low-Ripple and High-Efficiency Charge Pump with Continuous Regulation Scheme for 3D NAND Flash Memories

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2018.8564843 ◽

2018 ◽

Author(s):

Qianqian Wang ◽

Fei Liu ◽

Cece Huang ◽

Liyin Fu ◽

Zongliang Huo

Keyword(s):

High Efficiency ◽

Charge Pump ◽

Flash Memories ◽

Regulation Scheme

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Total Ionizing Dose Effects in 3-D NAND Flash Memories

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2018.2878911 ◽

2019 ◽

Vol 66 (1) ◽

pp. 48-53 ◽

Author(s):

Marta Bagatin ◽

Simone Gerardin ◽

Alessandro Paccagnella ◽

Silvia Beltrami ◽

Alessandra Costantino ◽

...

Keyword(s):

Total Ionizing Dose ◽

Flash Memories ◽

Dose Effects ◽

Total Ionizing Dose Effects

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Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

2011 International Reliability Physics Symposium ◽

10.1109/irps.2011.5784588 ◽

2011 ◽

Author(s):

Carmine Miccoli ◽

Christian Monzio Compagnoni ◽

Alessandro S. Spinelli ◽

Andrea L. Lacaita

Keyword(s):

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Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

2013 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps.2013.6531979 ◽

2013 ◽

Author(s):

S. Tanakamaru ◽

M. Doi ◽

K. Takeuchi

Keyword(s):

Solid State ◽

System Level ◽

Error Prediction ◽

Solid State Drives ◽

Flash Memories ◽

Reliability Improvement

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