Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

Author(s):  
S. Tanakamaru ◽  
M. Doi ◽  
K. Takeuchi
Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1394
Author(s):  
Cristian Zambelli ◽  
Lorenzo Zuolo ◽  
Antonio Aldarese ◽  
Salvatrice Scommegna ◽  
Rino Micheloni ◽  
...  

3D NAND Flash is the preferred storage medium for dense mass storage applications, including Solid State Drives and multimedia cards. Improving the latency of these systems is a mandatory task to narrow the gap between computing elements, such as CPUs and GPUs, and the storage environment. To this extent, relatively time-consuming operations in the storage media, such as data programming and data erasing, need to be prioritized and be potentially suspendable by shorter operations, like data reading, in order to improve the overall system quality of service. However, such benefits are strongly dependent on the storage characteristics and on the timing of the single operations. In this work, we investigate, through an extensive characterization, the impacts of suspending the data programming operation in a 3D NAND Flash device. System-level simulations proved that such operations must be carefully characterized before exercising them on Solid State Drives to eventually understand the performance benefits introduced and to disclose all the potential shortcomings.


2017 ◽  
Vol 17 (4) ◽  
pp. 713-721 ◽  
Author(s):  
Cristian Zambelli ◽  
Alessia Marelli ◽  
Rino Micheloni ◽  
Piero Olivo

2010 ◽  
Vol E93-C (3) ◽  
pp. 317-323 ◽  
Author(s):  
Tadashi YASUFUKU ◽  
Koichi ISHIDA ◽  
Shinji MIYAMOTO ◽  
Hiroto NAKAI ◽  
Makoto TAKAMIYA ◽  
...  

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