Enhancement of electrical characteristics of the coupling ratio and the program/erase operation for NAND flash memories with an asymmetric interpoly-dielectric structure

2014 ◽  
Vol 53 (6) ◽  
pp. 064306 ◽  
Author(s):  
Ju Tae Ryu ◽  
Sung Hwan Jang ◽  
Tae Whan Kim
Keyword(s):  
Electrical Characteristics ◽  
Nand Flash ◽  
Dielectric Structure ◽  
Coupling Ratio ◽  
Flash Memories

scholarly journals A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs

2020 ◽  
Author(s):  
Aurelio Mannara ◽  
Gerardo Malavena ◽  
Alessandro Sottocornola Spinelli ◽  
Christian Monzio Compagnoni
Keyword(s):  
Thermionic Emission ◽  
Effective Medium Approximation ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Nand Flash ◽  
Drift Diffusion ◽  
Flash Memories ◽  
Average Behavior ◽  
3 Dimensional ◽  
Basic Physics

Abstract In this paper, we compare quantitatively the results obtained from the numerical simulation of current transport in polysilicon-channel MOSFETs under different modeling assumptions typically adopted to reproduce the basic physics of the devices, including the effective medium approximation and the description of polysilicon as the haphazard ensemble of monocrystalline silicon grains separated by highly defective grain boundaries. In the latter case, both pure drift-diffusion transport and a mix of intra-grain drift-diffusion and inter-grain thermionic emission are considered. Interest is focused on cylindrical nanowire and macaroni gate-all-around structures, due to their relevance in the field of 3-Dimensional NAND Flash memories, focusing not only on the average behavior but also on the variability in the electrical characteristics of the devices.

The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories

2017 ◽  
Vol 38 (10) ◽  
pp. 1375-1378 ◽  
Author(s):  
Kee Tae Kim ◽  
Sung Woo An ◽  
Hyun Soo Jung ◽  
Keon-Ho Yoo ◽  
Tae Whan Kim
Keyword(s):  
Electrical Characteristics ◽  
Nand Flash ◽  
Flash Memories ◽  
Taper Angle

A Heavy-ion Beam Monitor Based on 3D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
S. Gerardin ◽  
M. Bagatin ◽  
A. Paccagnella ◽  
S. Beltrami ◽  
A. Costantino ◽  
...  
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Nand Flash ◽  
Flash Memories ◽  
Beam Monitor ◽  
Heavy Ion Beam

Improving Read Disturb Characteristics by Self-Boosting Read Scheme for Multilevel NAND Flash Memories

2009 ◽  
Vol 48 (4) ◽  
pp. 04C062 ◽  
Author(s):  
Myounggon Kang ◽  
Ki-Tae Park ◽  
Youngsun Song ◽  
Soonwook Hwang ◽  
Byung Yong Choi ◽  
...  
Keyword(s):  
Nand Flash ◽  
Flash Memories

Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories

2021 ◽  
pp. 1-1
Author(s):  
Yu-Heng Liu ◽  
Yu-Siang Yang ◽  
Chih-Yuan Tseng ◽  
Wei Lin ◽  
An-Chang Liu ◽  
...  
Keyword(s):  
Nand Flash ◽  
Data Retention ◽  
Flash Memories ◽  
Single Level ◽  
Mode Operation

Total Ionizing Dose Effects in 3-D NAND Flash Memories

2019 ◽  
Vol 66 (1) ◽  
pp. 48-53 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Silvia Beltrami ◽  
Alessandra Costantino ◽  
...  
Keyword(s):  
Nand Flash ◽  
Total Ionizing Dose ◽  
Flash Memories ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

2011 ◽  
Author(s):  
Carmine Miccoli ◽  
Christian Monzio Compagnoni ◽  
Alessandro S. Spinelli ◽  
Andrea L. Lacaita
Keyword(s):  
Nand Flash ◽  
Flash Memories
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