Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al/sub 2/O/sub 3/, Si and GaAs substrates
Keyword(s):
2001 ◽
Vol 227-228
◽
pp. 420-424
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Keyword(s):
2000 ◽
Vol 360
(1-2)
◽
pp. 195-204
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Keyword(s):
2005 ◽
Vol 44
(No. 17)
◽
pp. L508-L510
◽
Keyword(s):