Experimental study on silicon nanowire nMOSFET and single-electron transistor at room temperature under uniaxial tensile strain

2008 ◽  
Author(s):  
YeonJoo Jeong ◽  
Kousuke Miyaji ◽  
Toshiro Hiramoto
Keyword(s):  
Experimental Study ◽  
Tensile Strain ◽  
Room Temperature ◽  
Silicon Nanowire ◽  
Single Electron ◽  
Uniaxial Tensile ◽  
Single Electron Transistor

Room-Temperature Carbon Nanotube Single-Electron Transistor with Defects Introduced by La(NO3)3Process

2008 ◽  
Vol 47 (7) ◽  
pp. 5724-5726 ◽  
Author(s):  
Masatoshi Maeda ◽  
Shin Iwasaki ◽  
Takafumi Kamimura ◽  
Katsuyuki Murata ◽  
Kazuhiko Matsumoto
Keyword(s):  
Carbon Nanotube ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistor

Fabrication technique for Si single-electron transistor operating at room temperature

1995 ◽  
Vol 31 (2) ◽  
pp. 136-137 ◽  
Author(s):  
Y. Takahashi ◽  
K. Iwdate ◽  
M. Nagase ◽  
K. Murase ◽  
S. Horiguchi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Fabrication Technique
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