mmWave Communications for High Mobility Devices: The Case of Road Side Links

2021 ◽  
Author(s):  
Mohaned Chraiti ◽  
Andrea Conti ◽  
Moe Z. Win
Keyword(s):  
High Mobility ◽  
Mobility Devices

In-crystal Carrier Transport in Organic Single Crystal Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Jun Takeya ◽  
M. Yamagishi ◽  
Y. Tominari ◽  
Y. Iwasaki ◽  
M. Uno
Keyword(s):  
Single Crystal ◽  
Electric Fields ◽  
Carrier Transport ◽  
High Mobility ◽  
Organic Crystals ◽  
Double Gate ◽  
Intrinsic Semiconductor ◽  
Mobility Devices ◽  
Organic Single Crystal ◽  
Semiconductor Character

AbstractWe report a series of our experiments using organic single crystals to reach the maximum performance intrinsic to the materials. A consequence of the experiments is that a prescription for realizing high-mobility devices is to induce carriers in inner crystals to avoid scattering at the surfaces. Intrinsic-semiconductor character of the high-purity organic crystals favors thermal diffusion of the carriers into the crystals in the presence of weak gate-electric fields. Furthermore, it is demonstrated that the high-mobility transport of the in-crystal carriers are highlighted in double-gate single-crystal transistors with the two gate electric field balanced with each other.

Performances and limitations of InAs∕InAlAs metamorphic heterostructures on InP for high mobility devices

2005 ◽  
Vol 87 (4) ◽  
pp. 043504 ◽  
Author(s):  
X. Wallart ◽  
J. Lastennet ◽  
D. Vignaud ◽  
F. Mollot
Keyword(s):  
High Mobility ◽  
Mobility Devices

scholarly journals Weak Localization in Graphene: Theory, Simulations, and Experiments

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Michael Hilke ◽  
Mathieu Massicotte ◽  
Eric Whiteway ◽  
Victor Yu
Keyword(s):  
Carrier Transport ◽  
Localization Length ◽  
High Mobility ◽  
Weak Localization ◽  
Weak Antilocalization ◽  
Unified Framework ◽  
Strong Localization ◽  
Mobility Devices ◽  
Comprehensive Picture ◽  
Graphene Devices

We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of nonquantizing magnetic fields. We discuss the effects of two-carrier transport, weak localization, weak antilocalization, and strong localization for graphene devices of various mobilities, through theory, experiments, and numerical simulations. In particular, we observe a minimum in the weak localization and strong localization length reminiscent of the minimum in the conductivity, which allows us to make the connection between weak and strong localization. This provides a unified framework for both localizations, which explains the observed experimental features. We compare these results to numerical simulation and find a remarkable agreement between theory, experiment, and numerics. Various graphene devices were used in this study, including graphene on different substrates, such as glass and silicon, as well as low and high mobility devices.

Characterising gate dielectrics in high mobility devices using novel nanoscale techniques

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1484-1487
Author(s):  
R. Kapoor ◽  
E. Escobedo-Cousin ◽  
S.H. Olsen ◽  
S.J. Bull
Keyword(s):  
Gate Dielectrics ◽  
High Mobility ◽  
Mobility Devices

Negative-resistance and high-mobility devices based on paper

2017 ◽  
Vol 7 (1) ◽  
pp. 5-14 ◽  
Author(s):  
Ye Wu ◽  
Hao Fu ◽  
Bin Li ◽  
Yingcheng Lin
Keyword(s):  
High Mobility ◽  
Negative Resistance ◽  
Mobility Devices

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

2003 ◽  
Vol 19 (3) ◽  
pp. 311-318 ◽  
Author(s):  
J M Hartmann ◽  
Y Bogumilowicz ◽  
P Holliger ◽  
F Laugier ◽  
R Truche ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
High Mobility ◽  
Reduced Pressure ◽  
Mobility Devices ◽  
Pressure Chemical

Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices

1995 ◽  
Vol 67 (16) ◽  
pp. 2373-2375 ◽  
Author(s):  
P. M. Mooney ◽  
J. L. Jordan‐Sweet ◽  
K. Ismail ◽  
J. O. Chu ◽  
R. M. Feenstra ◽  
...  
Keyword(s):  
High Mobility ◽  
Buffer Layers ◽  
Mobility Devices

Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

2011 ◽  
Vol 58 (11) ◽  
pp. 4016-4023
Author(s):  
Raman Kapoor ◽  
Enrique Escobedo-Cousin ◽  
Sarah H. Olsen ◽  
Steve J. Bull
Keyword(s):  
High Mobility ◽  
Gate Leakage ◽  
Mobility Devices ◽  
Nanoscale Characterization

A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

1994 ◽  
Vol 52 ◽  
pp. 700-701
Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn
Keyword(s):  
Stainless Steels ◽  
High Mobility ◽  
Hot Extrusion ◽  
Extrusion Ratio ◽  
Gas Atomization ◽  
Cavity Formation ◽  
Nucleation Sites ◽  
Heat Treated ◽  
Different Types ◽  
Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

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