Test Chips with Scan-Based Logic Arrays

Author(s):  
Yu-Hsiang Chen ◽  
Chia-Ming Hsu ◽  
Kuen-Jong Lee
Keyword(s):  
Author(s):  
Franco Stellari ◽  
Peilin Song

Abstract In this paper, the development of advanced emission data analysis methodologies for IC debugging and characterization is discussed. Techniques for automated layout to emission registration and data segmentations are proposed and demonstrated using both 22 nm and 14 nm SOI test chips. In particular, gate level registration accuracy is leveraged to compare the emission of different types of gates and quickly create variability maps automatically.


2007 ◽  
Vol 4 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Qing Liu ◽  
Patrick Fay ◽  
Gary H. Bernstein

Quilt Packaging (QP), a novel chip-to-chip communication paradigm for system-in-package integration, is presented. By forming protruding metal nodules along the edges of the chips and interconnecting integrated circuits (ICs) through them, QP offers an approach to ameliorate the I/O speed bottleneck. A fabrication process that includes deep reactive ion etching, electroplating, and chemical-mechanical polishing is demonstrated. As a low-temperature process, it can be easily integrated into a standard IC fabrication process. Three-dimensional electromagnetic simulations of coplanar waveguide QP structures have been performed, and geometries intended to improve impedance matching at the interface between the on-chip interconnects and the chip-to-chip nodule structures were evaluated. Test chips with 100 μm wide nodules were fabricated on silicon substrates, and s-parameters of chip-to-chip interconnects were measured. The insertion loss of the chip-to-chip interconnects was as low as 0.2 dB at 40 GHz. Simulations of 20 μm wide QP structures suggest that the bandwidth of the inter-chip nodules is expected to be above 200 GHz.


2015 ◽  
Vol 2015 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Dyi-Chung Hu ◽  
Yu-Min Lin ◽  
Hsiang Hung Chang ◽  
Tao-Chih Chang ◽  
Wei-Chung Lo ◽  
...  

A new concept of packaging platform calls eHDF (embedded high density film), that without any TXVs is been proposed. The eHDF uses the technology from two categories; one utilize the semiconductor fine line technology infrastructure and the other takes the advantage of laminate organic large panel process infrastructure. Hence, the fine line, better electrical performance and low cost requirements can be addressed at the same time by the eHDF packaging platform. In this paper, a test vehicle based on eHDF structure will be built and modules assembly with test chips on eHDF substrate will be performed.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000873-000881
Author(s):  
Thomas Tarter ◽  
Bernie Siegal

1991 ◽  
Vol 113 (3) ◽  
pp. 203-215 ◽  
Author(s):  
D. A. Bittle ◽  
J. C. Suhling ◽  
R. E. Beaty ◽  
R. C. Jaeger ◽  
R. W. Johnson

Structural reliability of electronic packages has become an increasing concern for a variety of reasons including the advent of higher integrated circuit densities, power density levels, and operating temperatures. A powerful method for experimental evaluation of die stress distributions is the use of test chips incorporating integral piezoresistive sensors. In this paper, the theory of conduction in piezoresistive materials is reviewed and the basic equations applicable to the design of stress sensors on test chips are presented. General expressions are obtained for the stress-induced resistance changes which occur in arbitrarily oriented one-dimensional filamentary conductors fabricated out of crystals with cubic symmetry and diamond lattice structure. These relations are then applied to obtain basic results for stressed in-plane resistors fabricated into the surface of (100) and (111) oriented silicon wafers. Sensor rosettes developed by previous researchers for each of these wafer orientations are reviewed and more powerful rosettes are presented along with the equations needed for their successful application. In particular, a new sensor rosette fabricated on (111) silicon is presented which can measure the complete three-dimensional stress state at points on the surface of a die


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