Modelling of supply voltage frequency effect on partial discharge repetition rate and charge amplitude from AC to DC at room temperature

2020 ◽  
Vol 27 (3) ◽  
pp. 764-772 ◽  
Author(s):  
P. Seri ◽  
H. Naderiallaf ◽  
G. C. Montanari
Energies ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 478
Author(s):  
Tapiwa Venge ◽  
Cuthbert Nyamupangedengu

The supply voltage frequency effect on partial discharge (PD) phenomena has continued to draw research interest. Although most high voltage equipment operates at power frequency (50/60 Hz), testing is often done at different frequencies for various reasons. Despite some agreements and inconsistencies for the research findings of PD activity’s frequency dependence, there has been consensus on the recognition of the discharge mechanism parameters that influence how the supply voltage frequency affects PD activity. These parameters include statistical time lag, discharge area surface conductivity, and the residual charge decay. In this paper, a 3-capacitor model (ABC) is used to simulate how the changes in the discharge mechanism parameters influence PD characteristics as a function of the supply voltage frequency. The findings are that the phase-resolved partial discharge pattern (PRPDP) and PD repetition rate (PDRR) characteristics are more sensitive to variations in the probability of the seed electron availability at higher frequencies of the supply voltage. The opposite trend is observed for the cavity surface resistance. At lower resistance of cavity surface, the PRPDP and PDRR characteristics are more sensitive to changes in the supply voltage frequency than at higher resistances. The paper also confirms that incorporating equivalent resistances in the ABC model makes it more authentic than the model comprising of capacitors only.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 617
Author(s):  
Li-Fang Jia ◽  
Lian Zhang ◽  
Jin-Ping Xiao ◽  
Zhe Cheng ◽  
De-Feng Lin ◽  
...  

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.


2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.


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