Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks

2009 ◽  
Vol 9 (3) ◽  
pp. 425-430 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
A. De Keersgieter ◽  
R. Rodriguez ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Degradation

Channel Hot-Carrier degradation in short channel devices with high-k/metal gate stacks

2009 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
R. Rodriguez ◽  
M. Nafria ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Degradation

Channel Hot-Carrier degradation under static stress in short channel transistors with high-k/metal gate stacks

2008 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
A. De Keersgieter ◽  
R. Rodriguez ◽  
...  
Keyword(s):  
Static Stress ◽  
Gate Stacks ◽  
Metal Gate ◽  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Degradation

Channel hot-carrier degradation under AC stress in short channel nMOS devices with high-k gate stacks

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1908-1910 ◽  
Author(s):  
E. Amat ◽  
R. Rodríguez ◽  
M. Nafría ◽  
X. Aymerich
Keyword(s):  
Gate Stacks ◽  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Degradation

Intrinsic hot-carrier degradation of nMOSFETs by decoupling PBTI component in 28nm high-k/metal gate stacks

2012 ◽  
Author(s):  
Nathan Hui-Hsin Hsu ◽  
Jian-Wen You ◽  
Huan-Chi Ma ◽  
Shih-Ching Lee ◽  
Eliot Chen ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K ◽  
Hot Carrier Degradation

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks

2010 ◽  
Author(s):  
Won-Ho Choi ◽  
Chang-Young Kang ◽  
Jung-Woo Oh ◽  
Byoung-Hun Lee ◽  
Prashant Majhi ◽  
...  
Keyword(s):  
High Performance ◽  
Negative Bias ◽  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1901-1904 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K ◽  
Enhanced Degradation

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

2010 ◽  
Vol 87 (1) ◽  
pp. 47-50 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
R. Rodríguez ◽  
M. Nafría ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
High K Dielectric ◽  
Hot Carrier Degradation

New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

2011 ◽  
Author(s):  
Hyun Chul Sagong ◽  
Chang Yong Kang ◽  
Chang-Woo Sohn ◽  
Min Sang Park ◽  
Do-Young Choi ◽  
...  
Keyword(s):  
Small Signal ◽  
Metal Gate ◽  
Hot Carrier ◽  
Signal Parameters ◽  
High K ◽  
Hot Carrier Degradation

Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

2010 ◽  
Vol 23 (4-5) ◽  
pp. 315-323 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
R. Rodríguez ◽  
M. Nafría ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
High K Dielectric ◽  
Hot Carrier Degradation
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