Geometric Nonlinear Effect on Biaxial Bending Strength of Thin Silicon Die in the PoEF Test

2020 ◽  
Vol 20 (2) ◽  
pp. 442-451
Author(s):  
Ming-Yi Tsai ◽  
Jia-Hao Yeh ◽  
Pu-Shan Huang ◽  
D. L. Chen ◽  
M. K. Shih ◽  
...  
Author(s):  
Ming-Yi Tsai ◽  
H. Y. Liu

Abstract The ball-on-ring (BoR) test, one of the most popular biaxial bending tests, is thoroughly investigated in this study for determining the bending strength of thin silicon dies. The application of this test method with a linear theory to the thin dies is also reevaluated using a nonlinear finite element method (NFEM) by taking into account the geometric nonlinearities, including large-deflection (global) and contact (local) nonlinearities. Mechanics of the BoR test is also discussed in terms of geometric linearity and nonlinearity. It is found that the bending strength calculated by the existing linear theory for the BoR test is still valid for the non-thin die specimens, but not for thin ones. The reason is that the thin-die specimens in the test suffer a contact-nonlinearity effect, due to a maximum applied stress moving away from the loading pin center during the loading process. The global geometric nonlinear (large-deflection) behavior occurring in the three-point bending test is not observed in the test. For applications, the fitting equations of the maximum stress in terms of applied load are proposed based on the NFEM results. Those fitting equations only depend on the specimen thickness, the head radius of the loading pin, and the elastic modulus of the specimen, but not on the specimen radius, a supporting ring radius and the head radius of the ring. The 110 µm and 160 µm-thick silicon dies in the BoR test are also demonstrated with the related fitting equations.


2019 ◽  
Vol 19 (4) ◽  
pp. 615-621 ◽  
Author(s):  
Ming-Yi Tsai ◽  
P. S. Huang ◽  
J. H. Yeh ◽  
H. Y. Liu ◽  
Y. C. Chao ◽  
...  

2018 ◽  
Vol 3 (1) ◽  
pp. 281
Author(s):  
Jorge Ricardo Vintimilla Jaramillo ◽  
Luis Tinerfe Hernández Rodríguez

The work presented is based on experimental and theoretical analysis of SRC composite columns subjected to biaxial bending and axial compression, where the specification of American and European code criteria are used to calculate de load bending strength. The computer program to calculate the interaction diagram of biaxial bending and axial compression with inclined neutral axis is made in the software Matlab by using the fiber method, besides, the strength of the specimen is calculated. Users can design new frame sections and check the exist sections. To obtain the displacements and load curve, to calculate load contours and determination of the interaction family curves of the modeled sections. The destructive performance of the round and rectangle composite columns are made in the structures laboratory of EPN to obtain the results such as the buckling displacement at strong, weak and longitudinal direction measured with LVDT´S. Subsequently, the theoretical and experimental analysis results are made to demonstrate the reliability of the numeric model.Keywords: Composite Columns, Concrete, Steel


2019 ◽  
Vol 2019 (0) ◽  
pp. J22306
Author(s):  
Takashi HAIMOTO ◽  
Sakae MATSUZAKI ◽  
Akihito KAWAI ◽  
Hayato IZUMI ◽  
Shoji KAMIYA

2015 ◽  
Author(s):  
Marcelo Amorim Savi ◽  
Mauricio S. Garcia ◽  
Pedro Manuel Calas Lopes Pacheco ◽  
Ricardo Alexandre Amar de Aguiar ◽  
Luís Felipe Guimarães de Souza ◽  
...  

Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions


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