Modeling of $V_{\rm th}$ Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.916769 ◽

2008 ◽

Vol 55 (4) ◽

pp. 1020-1026 ◽

Author(s):

Sang-Goo Jung ◽

Keun-Woo Lee ◽

Ki-Seog Kim ◽

Seung-Woo Shin ◽

Seaung-Suk Lee ◽

...

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Short Channel Effects ◽

Nand Flash Memory ◽

Short Channel ◽

Channel Effects ◽

Flash Memory Cell

Download Full-text

NAND flash memory device with ground plane in buried oxide for reduced short channel effects and improved data retention

Journal of Computational Electronics ◽

10.1007/s10825-018-01298-9 ◽

2019 ◽

Vol 18 (2) ◽

pp. 500-508 ◽

Author(s):

Pooja Bohara ◽

Santosh Kumar Vishvakarma

Keyword(s):

Flash Memory ◽

Ground Plane ◽

Memory Device ◽

Short Channel Effects ◽

Nand Flash Memory ◽

Data Retention ◽

Short Channel ◽

Buried Oxide ◽

Channel Effects

Download Full-text

Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells

10.7567/ssdm.2011.p-4-1 ◽

2011 ◽

Author(s):

K. Miyaji ◽

C. Hung ◽

K. Takeuchi

Keyword(s):

Flash Memory ◽

Scaling Limit ◽

Memory Cells ◽

Short Channel Effects ◽

Nand Flash Memory ◽

Short Channel ◽

Channel Effects

Download Full-text

Simulation of grain-boundary traps effect for 3D vertical gate NAND flash memory cell : From structure geometry to trap description

2014 Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2014.7348607 ◽

2014 ◽

Author(s):

Pei-Yu Wang ◽

Bing-Yue Tsui

Keyword(s):

Grain Boundary ◽

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Structure Geometry ◽

Flash Memory Cell ◽

Download Full-text

Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

2013 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2013.6724554 ◽

2013 ◽

Author(s):

Jihyun Seo ◽

Kyoungrok Han ◽

Taeun Youn ◽

Hye-Eun Heo ◽

Sanghyun Jang ◽

...

Keyword(s):

Flash Memory ◽

Process Integration ◽

Memory Cell ◽

Air Gap ◽

Nand Flash Memory ◽

Flash Memory Cell

Download Full-text

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2015.15.2.286 ◽

2015 ◽

Vol 15 (2) ◽

pp. 286-291 ◽

Author(s):

Wookhyun Kwon ◽

In Jun Park ◽

Changhwan Shin

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Charge Storage ◽

Cell Design ◽

Nand Flash Memory ◽

Flash Memory Cell

Download Full-text

A middle-1X nm NAND flash memory cell (M1X-NAND) with highly manufacturable integration technologies

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131518 ◽

2011 ◽

Author(s):

Joowon Hwang ◽

Jihyun Seo ◽

Youngbok Lee ◽

Sungkee Park ◽

Jongsoon Leem ◽

...

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Flash Memory Cell

Download Full-text

The 3-dimensional vertical FG NAND flash memory cell arrays with the novel electrical S/D technique using the Extended Sidewall Control Gate (ESCG)

2010 IEEE International Memory Workshop ◽

10.1109/imw.2010.5488392 ◽

2010 ◽

Author(s):

Moon-Sik Seo ◽

Sung-kye Park ◽

Tetsuo Endoh

Keyword(s):

Flash Memory ◽

Memory Cell ◽

The Novel ◽

Nand Flash Memory ◽

3 Dimensional ◽

Cell Arrays ◽

Flash Memory Cell

Download Full-text

Investigation of 3-D stacked NAND flash memory cell string having 4F2 cell size and shield layer for suppressing cross-talk

Current Applied Physics ◽

10.1016/j.cap.2011.01.019 ◽

2011 ◽

Vol 11 (2) ◽

pp. e2-e5

Author(s):

Min-Kyu Jeong ◽

Ju-Wan Lee ◽

Jong-Ho Lee

Keyword(s):

Cell Size ◽

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Flash Memory Cell

Download Full-text

(Invited) Analysis of the Scaling Effect on NAND Flash Memory Cell Operation

ECS Transactions ◽

10.1149/05034.0027ecst ◽

2013 ◽

Vol 50 (34) ◽

pp. 27-35

Author(s):

R. Shirota ◽

H. Watanabe

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Nand Flash Memory ◽

Scaling Effect ◽

Flash Memory Cell

Download Full-text

Investigation of reliability issue in tunneling and inter-poly dielectrics in floating gate NAND flash memory cell strings

The 4th IEEE International NanoElectronics Conference ◽

10.1109/inec.2011.5991803 ◽

2011 ◽

Author(s):

Jong-Ho Lee ◽

Sung-Min Joe

Keyword(s):

Flash Memory ◽

Memory Cell ◽

Floating Gate ◽

Nand Flash Memory ◽

Flash Memory Cell ◽

Reliability Issue

Download Full-text