Characteristics of GaN-Based Bipolar Transistors on Sapphire Substrates With the n-Type Emitter Region Formed Using Si-Ion Implantation

2014 ◽  
Vol 61 (10) ◽  
pp. 3411-3416 ◽  
Author(s):  
Akihisa Terano ◽  
Tomonobu Tsuchiya ◽  
Kazuhiro Mochizuki
Keyword(s):  
Ion Implantation ◽  
Bipolar Transistors ◽  
Sapphire Substrates ◽  
Emitter Region ◽  
Si Ion Implantation

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

1991 ◽  
Vol 6 (9) ◽  
pp. 912-915 ◽  
Author(s):  
G Zou ◽  
R Pereira ◽  
M de Potter ◽  
M Van Hove ◽  
W De Raedt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Highly Uniform ◽  
Si Ion Implantation

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

2019 ◽  
Vol 40 (3) ◽  
pp. 431-434 ◽  
Author(s):  
Man Hoi Wong ◽  
Ken Goto ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Masataka Higashiwaki
Keyword(s):  
Ion Implantation ◽  
Si Ion Implantation
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