Complementary Vacuum Field Emission Transistor

UHV(ultrahigh-vacuum) TEM has long been used as a powerful tool for studying crystal surfaces, particularly for both the direct imaging of the surface structure and for in-situ observation of surface reaction processes with atomic resolution.This paper reports a newly developed 200kV UHV TEM equipped with a field emission gun(FEG). The instrument is designed to obtain information about elemental or bonding states of surfaces in addition to observation of surface atomic structure with high contrast. Basic performances of the UHV FE-TEM includes a specimen vacuum of 2.0X10-8Pa, probe size less than 1.0nm Ø with 0.5nA probe current, point-to-point resolution of 0.21 nm, and a lattice resolution of 0.10nm.A UHV Energy Dispersive X-ray Spectrometer (EDS) originally developed by JEOL Ltd. and a Parallel Electron Energy Loss Spectrometer (PEELS) are attached to the UHV FE-TEM, which combined with a fine focused probe of 1.Onm Ø allows atomic scale spectroscopy of surfaces.

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Vertically Configured Nanodiamond Vacuum Field Emission Transistor Arrays

ECS Transactions ◽

10.1149/1.3570861 ◽

2019 ◽

Vol 35 (6) ◽

pp. 191-197 ◽

Cited By ~ 1

Author(s):

S. H. Hsu ◽

W. P. Kang ◽

J. L Davidson ◽

Jin-Hua Huang

Keyword(s):

Field Emission ◽

Vacuum Field

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Work function consideration in vacuum field emission transistor design

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5000549 ◽

2017 ◽

Vol 35 (6) ◽

pp. 062203 ◽

Cited By ~ 3

Author(s):

Jiwon Kim ◽

Hyeongwan Oh ◽

Jungsik Kim ◽

Rock-Hyun Baek ◽

Jin-Woo Han ◽

...

Keyword(s):

Work Function ◽

Field Emission ◽

Vacuum Field

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Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.1010 ◽

2013 ◽

Vol 740-742 ◽

pp. 1010-1013 ◽

Cited By ~ 14

Author(s):

Alexey V. Afanasyev ◽

Boris V. Ivanov ◽

Vladimir A. Ilyin ◽

Alexey F. Kardo-Sysoev ◽

Maria A. Kuznetsova ◽

...

Keyword(s):

Field Emission ◽

Wide Bandgap ◽

Voltage Characteristic ◽

Vacuum Field ◽

Current Voltage ◽

Capacitor Voltage ◽

Current Densities ◽

Current Voltage Characteristics ◽

Manufacturing Methods ◽

Diode Current

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.

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