High-Accuracy and Fast Measurement of Optical Transfer Delay

2021 ◽  
Vol 70 ◽  
pp. 1-4 ◽  
Author(s):  
Shupeng Li ◽  
Ting Qing ◽  
Jianbin Fu ◽  
Xiangchuan Wang ◽  
Shilong Pan
2021 ◽  
Author(s):  
Xi Liu ◽  
Lihan Wang ◽  
Xiaohu Tang ◽  
Shupeng Li ◽  
Cong Ma ◽  
...  

2013 ◽  
Vol 303-306 ◽  
pp. 1842-1848 ◽  
Author(s):  
Jin Rong Wu ◽  
Ying Ju ◽  
Zhi Lun Lin ◽  
Chu Lian Lin ◽  
Xiao Chao Li

This paper presents a modified preamplifier-latch comparator for minimum latch delay and minimum input referred noise. The ratio of PMOS/NMOS in cross-coupled inverter is verified theoretically and optimized for minimum comparator delay. The cross-coupled load, the cascaded structure and the capacitor neutralization techniques are adopted to reduce the kickback noise and the input referred offset voltage. The comparator circuit is designed in a TSMC 0.35 um/3.3 V 2P4M CMOS process. Simulations show that the delay time of latch is declined by 18 percent after optimization and the maximum transfer delay time is only 384.5 ps. The peak to peak value of kickback noise is only 0.831uV in case of Vin,max=1.25 V, and the Monte Carlo simulation results show that equivalent input referred offset voltage is 4.56mV.


2021 ◽  
Vol 39 (2) ◽  
pp. 627-632
Author(s):  
Shupeng Li ◽  
Ting Qing ◽  
Jianbin Fu ◽  
Xiangchuan Wang ◽  
Shilong Pan

Author(s):  
M. Nishigaki ◽  
S. Katagiri ◽  
H. Kimura ◽  
B. Tadano

The high voltage electron microscope has many advantageous features in comparison with the ordinary electron microscope. They are a higher penetrating efficiency of the electron, low chromatic aberration, high accuracy of the selected area diffraction and so on. Thus, the high voltage electron microscope becomes an indispensable instrument for the metallurgical, polymer and biological specimen studies. The application of the instrument involves today not only basic research but routine survey in the various fields. Particularly for the latter purpose, the performance, maintenance and reliability of the microscope should be same as those of commercial ones. The authors completed a 500 kV electron microscope in 1964 and a 1,000 kV one in 1966 taking these points into consideration. The construction of our 1,000 kV electron microscope is described below.


Author(s):  
Vijay Krishnamurthi ◽  
Brent Bailey ◽  
Frederick Lanni

Excitation field synthesis (EFS) refers to the use of an interference optical system in a direct-imaging microscope to improve 3D resolution by axially-selective excitation of fluorescence within a specimen. The excitation field can be thought of as a weighting factor for the point-spread function (PSF) of the microscope, so that the optical transfer function (OTF) gets expanded by convolution with the Fourier transform of the field intensity. The simplest EFS system is the standing-wave fluorescence microscope, in which an axially-periodic excitation field is set up through the specimen by interference of a pair of collimated, coherent, s-polarized beams that enter the specimen from opposite sides at matching angles. In this case, spatial information about the object is recovered in the central OTF passband, plus two symmetric, axially-shifted sidebands. Gaps between these bands represent "lost" information about the 3D structure of the object. Because the sideband shift is equal to the spatial frequency of the standing-wave (SW) field, more complete recovery of information is possible by superposition of fields having different periods. When all of the fields have an antinode at a common plane (set to be coincident with the in-focus plane), the "synthesized" field is peaked in a narrow infocus zone.


Author(s):  
K.-H. Herrmann ◽  
W. D. Rau ◽  
R. Sikeler

Quantitative recording of electron patterns and their rapid conversion into digital information is an outstanding goal which the photoplate fails to solve satisfactorily. For a long time, LLL-TV cameras have been used for EM adjustment but due to their inferior pixel number they were never a real alternative to the photoplate. This situation has changed with the availability of scientific grade slow-scan charged coupled devices (CCD) with pixel numbers exceeding 106, photometric accuracy and, by Peltier cooling, both excellent storage and noise figures previously inaccessible in image detection technology. Again the electron image is converted into a photon image fed to the CCD by some light optical transfer link. Subsequently, some technical solutions are discussed using the detection quantum efficiency (DQE), resolution, pixel number and exposure range as figures of merit.A key quantity is the number of electron-hole pairs released in the CCD sensor by a single primary electron (PE) which can be estimated from the energy deposit ΔE in the scintillator,


Author(s):  
C. Stoeckert ◽  
B. Etherton ◽  
M. Beer ◽  
J. Gryder

The interpretation of the activity of catalysts requires information about the sizes of the metal particles, since this has implications for the number of surface atoms available for reaction. To determine the particle dimensions we used a high resolution STEM1. Such an instrument with its simple optical transfer function is far more suitable than a conventional transmission electron microscope for the establishment of particle sizes. We report here our study on the size and number distribution of Ir particles supported on Al2O3 and also examine simple geometric models for the shape of Ir particles.


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