Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology

2006 ◽  
Vol 54 (2) ◽  
pp. 580-588 ◽  
Author(s):  
Tao Wang ◽  
Hsiao-Chin Chen ◽  
Hung-Wei Chiu ◽  
Yo-Sheng Lin ◽  
Guo Wei Huang ◽  
...  
Keyword(s):  
Cmos Lna ◽  
2008 ◽  
Vol 50 (12) ◽  
pp. 3142-3146
Author(s):  
Pen-Li Huang ◽  
Tao Wang ◽  
Yo-Sheng Lin ◽  
Shey-Shi Lu ◽  
Yu-Ming Teng ◽  
...  
Keyword(s):  
60 Ghz ◽  

2007 ◽  
Vol 43 (7) ◽  
pp. 398 ◽  
Author(s):  
T. Wang ◽  
Y.-S. Lin ◽  
S.-S. Lu
Keyword(s):  

Author(s):  
Jin-Fa Chang ◽  
Yo-Sheng Lin ◽  
Chi-Chen Chen ◽  
Chang-Zhi Chen ◽  
Tao Wang ◽  
...  

2006 ◽  
Vol 27 (4) ◽  
pp. 291-293 ◽  
Author(s):  
Tao Wang ◽  
Chun-Hao Chen ◽  
Yo-Sheng Lin ◽  
Shey-Shi Lu

Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


Author(s):  
Larisa A. Pautova ◽  
Vladimir A. Silkin ◽  
Marina D. Kravchishina ◽  
Valeriy G. Yakubenko ◽  
Anna L. Chultsova

The structure of the summer planktonic communities of the Northern part of the Barents sea in the first half of August 2017 were studied. In the sea-ice melting area, the average phytoplankton biomass producing upper 50-meter layer of water reached values levels of eutrophic waters (up to 2.1 g/m3). Phytoplankton was presented by diatoms of the genera Thalassiosira and Eucampia. Maximum biomass recorded at depths of 22–52 m, the absolute maximum biomass community (5,0 g/m3) marked on the horizon of 45 m (station 5558), located at the outlet of the deep trench Franz Victoria near the West coast of the archipelago Franz Josef Land. In ice-free waters, phytoplankton abundance was low, and the weighted average biomass (8.0 mg/m3 – 123.1 mg/m3) corresponded to oligotrophic waters and lower mesotrophic waters. In the upper layers of the water population abundance was dominated by small flagellates and picoplankton from, biomass – Arctic dinoflagellates (Gymnodinium spp.) and cold Atlantic complexes (Gyrodinium lachryma, Alexandrium tamarense, Dinophysis norvegica). The proportion of Atlantic species in phytoplankton reached 75%. The representatives of warm-water Atlantic complex (Emiliania huxleyi, Rhizosolenia hebetata f. semispina, Ceratium horridum) were recorded up to 80º N, as indicators of the penetration of warm Atlantic waters into the Arctic basin. The presence of oceanic Atlantic species as warm-water and cold systems in the high Arctic indicates the strengthening of processes of “atlantificacion” in the region.


2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto

Sign in / Sign up

Export Citation Format

Share Document