Dynamic Performance and Characterization of Traps Using Different Measurements Techniques for the New AlGaN/GaN HEMT of 0.15-$\mu$ m Ultrashort Gate Length

2019 ◽  
Vol 67 (7) ◽  
pp. 2475-2482 ◽  
Author(s):  
Mohamed Bouslama ◽  
Vincent Gillet ◽  
Christophe Chang ◽  
Jean-Christophe Nallatamby ◽  
Raphael Sommet ◽  
...  
2021 ◽  
Author(s):  
Lijun He ◽  
Boyang Zhao ◽  
Chengyun He ◽  
Zhiyang Xie ◽  
Xing Long ◽  
...  

Abstract This paper presents an exhaustive TCAD based comparison of the multi-gate and T-gate AlGaN/GaN HEMT. This paper simulates the DC and RF characteristics of the device and makes an accurate comparison. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency were obtained. It is concluded that the shape optimization of the HEMT with multi-finger gates and the advantages over traditional T-gate devices. The device of two-finger gate with 50nm spacing has the best output characteristics, and its maximum saturation current is about 110% the size of the device of four-finger gate with 200nm at VGS=0V. And the gm and the gain of the device with 50nm spacing two-finger gate is 76mS/mm larger than the HEMT of three-finger gate with 200nm. In addition, we also conducted a simulation in the case of changing only refers to finger-gate length and cap-gate length. And it is concluded that the two-finger gate HEMT with 250nm finger-gate length and 2.0µm cap-gate length has the best output characteristics, which output current is 0.159 A/µm at VGS=-1.5V. The results show that AlGaN/GaN HEMT with multi-finger gate have great potential for high power and high frequency applications electronic devices.


Author(s):  
Rand AL Mdanat ◽  
Ramy Georgious ◽  
Jorge Garcia ◽  
Giulio De Donato ◽  
Fabio Giulii Capponi

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  

2019 ◽  
Vol 9 (18) ◽  
pp. 3928 ◽  
Author(s):  
Chiara Bedon

Load-bearing laminated glass (LG) elements take the form of simple members in buildings (i.e., columns, beams, and plates) or realize stand-alone assemblies, where glass and other traditional constructional materials can interact. Among several relevant aspects, the dynamic response of LG structures requires dedicated methods of analysis, towards the fulfilment of safe design purposes. A combination of multiple aspects must be taken into account for dynamic calculations of even simple LG elements when compared to static conditions, first of all the sensitivity of common interlayers to the imposed vibration frequency. The challenge is even more complex for the vibration serviceability assessment of in-service LG structures, where the degradation of materials and possible delamination effects could manifest, hence resulting in structural performances that can markedly differ from early-design conditions. Major uncertainties can be associated to the actual mechanical characterization of materials in use (especially the viscoelastic interlayers), as well as the contribution of restraints (as compared to ideal boundaries) and the possible degradation of the bonding layers (i.e., delaminations). All of these aspects are examined in the paper, with the support of extended analytical calculations, on-site experimental measurements, and parametric Finite Element (FE) numerical analyses. When compared to literature efforts accounting for ideal boundaries only, an analytical formulation is proposed to include the effects of flexible restraints in the dynamic performance of general (double) LG beams. Special care is also spent for the presence of possible delaminations, including size and position effects. In the latter case, existing formulations for composite laminates are preliminarily adapted to LG beams. Their reliability and accuracy is assessed with the support of test predictions and parametric FE simulations.


2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.


Author(s):  
Gray C. Thomas ◽  
Clayton C. Gimenez ◽  
Erica D. Chin ◽  
Andrew P. Carmedelle ◽  
Aaron M. Hoover

This paper presents the design and experimental characterization of a continuously variable linear force amplifier based on the theory of capstans. In contrast to traditional capstan amplifiers, the design presented here uses an elastic cable, enabling a control actuator to not only continuously clutch output to a rotating drum but also passively declutch by releasing tension. Our experimental results demonstrate successful declutching at all force amplification ratios up to the limit of our experimental apparatus, 21 — significantly higher than previously published values. A system of distributed capstan amplifiers driven by a central torque source with cable engagement switched by lightweight, low torque actuators has potential to reduce the mass of distal actuators and enable more dynamic performance in robotic applications.


Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.


2010 ◽  
Vol 31 (11) ◽  
pp. 114004 ◽  
Author(s):  
Chi Chen ◽  
Yue Hao ◽  
Ling Yang ◽  
Si Quan ◽  
Xiaohua Ma ◽  
...  

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