scholarly journals Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Modulation Frequency ◽  
Dynamic Performance ◽  
Epitaxial Structure ◽  
Data Rates ◽  
Conductive Substrate ◽  
Fabrication And Characterization ◽  
Electric Field Profile

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

Design and Demonstration of 40 micron Bump Pitch Multi-layer RDL on Panel-based Glass Interposers

2015 ◽  
Vol 2015 (1) ◽  
pp. 000379-000385 ◽  
Author(s):  
Brett Sawyer ◽  
Yuya Suzuki ◽  
Zihan Wu ◽  
Hao Lu ◽  
Venky Sundaram ◽  
...  
Keyword(s):  
High Speed ◽  
Metal Layer ◽  
Low Cost ◽  
Signal Propagation ◽  
Additive Process ◽  
Thin Glass ◽  
Fine Pitch ◽  
Data Rates ◽  
Insertion Losses

This paper describes the design, fabrication, and characterization of a two-metal layer RDL structure at 40 um pitch on thin glass interposers. Such an RDL structure is targeted at 2.5D glass interposer packages to achieve up to 1 TB/s die-to-die bandwidth and off-interposer data rates greater than 400 Gb/s, driven by consumer demand of online services for mobile devices. Advanced packaging architectures including 2.5D and 3D interposers require fine line lithography beyond the capabilities of current organic package substrates. Although silicon interposers fabricated using back-end-of-line processes can achieve these RDL wiring densities, they suffer from high electrical loss and high cost. Organic interposers with high wiring densities have also been demonstrated recently using a single sided thin film process. This paper goes beyond silicon and organic interposers in demonstrating fine pitch RDL on glass interposers fabricated by low cost, double sided, and panel-scalable processes. The high modulus and smooth surface of glass helps to achieve lithographic pitch close to that of silicon. Furthermore, the low loss tangent of glass helps in reducing dielectric losses, thus improving high-speed signal propagation. A semi-additive process flow and projection excimer laser ablation was used to fabricate two-metal layer RDL structures and bare glass RDL layers. A minimum of 3 um lithography and 20 um mico-via pitch was achieved. High-frequency characterization of these RDL structures demonstrated single-ended insertion losses of −0.097 dB/mm at f = 1 GHz and differential insertion losses of −0.05 dB/mm at f = 14 GHz.

scholarly journals The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3399 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
June-Yan Chen ◽  
Jian-Nan Lin ◽  
Chi-Jen Teng ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Speed ◽  
Gain Bandwidth ◽  
Mesa Structure ◽  
Multiplication Gain ◽  
Data Rates ◽  
Field Control ◽  
Side Walls ◽  
Speed Response

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable high multiplication gain and high-speed response thanks to the thickness and concentration of the field-control and multiplication layers. A mesa active region of 45 micrometers was defined using a bromine-based isotropic wet etching solution. The side walls of the mesa were subjected to sulfur treatment before being coated with a thick polyimide layer to reduce current leakage, while lowering capacitance and increasing response speeds. The breakdown voltage (VBR) of the proposed SAGFM APDs was approximately 32 V. Under reverse bias of 0.9 VBR at room temperature, the proposed device achieved dark current of 31.4 nA, capacitance of 0.19 pF and multiplication gain of 9.8. The 3-dB frequency response was 8.97 GHz and the gain-bandwidth product was 88 GHz. A rise time of 42.0 ps was derived from eye-diagrams at 0.9 VBR. There was notable absence of intersymbol-interference and the signals remained error-free at data-rates of up to 12.5 Gbps.

Fabrication and Characterization of Aramid/Aerogel Composite

2015 ◽  
Vol 1096 ◽  
pp. 435-440
Author(s):  
Li Rong Yao ◽  
Juan Ren ◽  
Shan Qing Xu
Keyword(s):  
Room Temperature ◽  
Solvent System ◽  
Short Fiber ◽  
Thermal Bonding ◽  
Aerogel Composite ◽  
Fabrication And Characterization ◽  
High Shearing ◽  
Good Heat ◽  
Weight Proportion

The LiCl/DMAc was used as solvent system to dissolve meta-aramid short fiber, the aramid fibrid was prepared by injecting the aramid solution into the high shearing coagulant at room temperature and the mixture of water and N, N-dimethylacetamide (DMAc) was used as coagulant. The aramid fibrid and aramid short fiber were mixed at differents weight proportion, wet paper was dried and aramid paper was prepared by heat pressing. The aramid paper has excellent mechanical properties when the weight proportion of the aramid fibrid and aramid short fiber was 60:40,and it had a good thermal bonding between the fibrid and fiber under heat pressing. The hydrophobic SiO2 was mixed with aramid fibrid and aramid short fiber (60:40) in ethanol, and aramid/aerogel composite was prepared by drying and hot compressing. The composite had a good heat-resisting, however, the mechanical property decreased with the content of aerogel increasing.

Fabrication and characterization of magnetic porous silicon with curie temperature above room temperature

2017 ◽  
Vol 24 (5) ◽  
pp. 1139-1144 ◽  
Author(s):  
Mansour Aouassa ◽  
Imen Jadli ◽  
Mohammad Ali Zrir ◽  
Hassen Maaref ◽  
Ridha Mghaieth ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Curie Temperature ◽  
Room Temperature ◽  
Fabrication And Characterization

Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25cm2/Vs

2008 ◽  
Vol 9 (4) ◽  
pp. 432-438 ◽  
Author(s):  
Hoon-Seok Seo ◽  
Young-Se Jang ◽  
Ying Zhang ◽  
P. Syed Abthagir ◽  
Jong-Ho Choi
Keyword(s):  
Room Temperature ◽  
Fabrication And Characterization

Fabrication and Characterization of Bonded NdFeB Microstructures for Microelectromechanical Systems Applications

2011 ◽  
Vol 211-212 ◽  
pp. 561-564 ◽  
Author(s):  
Kai Tao ◽  
Gui Fu Ding ◽  
Zhuo Qing Yang ◽  
Yan Wang ◽  
Pei Hong Wang
Keyword(s):  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Steel Substrate ◽  
Metal Mold ◽  
Promising Candidate ◽  
Energy Product ◽  
Micro Patterning ◽  
Fabrication And Characterization ◽  
Bonded Magnet

A micromachining technique has been developed for the fabrication of microscale polymer-bonded magnet. Two types of lithographically defined molds, photoresist mold and electroplated metal mold, were introduced. Photoresist mold is convenient, while electroplated metal mold can be fabricated on the glass or steel substrate which can bear much more compression. NdFeB films of thickness between 50 and 500 µm were prepared by micro-patterning of composites containing 83-95wt% of commercial NdFeB powder after curing at the room temperature. Magnetic properties mainly depend on the types and percentage of volume loading of magnetic powder. Coercivity of 772.4kA/m (9.70kOe), remanence of 275.1mT (2.751kG), and energy product of 22.6kJ/m3 (2.8MGOe) have been achieved. This easily developed magnet could be a promising candidate for applications in magnetic microelectromechanical systems (MEMS).

Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction

2015 ◽  
Vol 24 (04) ◽  
pp. 1550050 ◽  
Author(s):  
Kieu Loan Phan Thi ◽  
Lam Thanh Nguyen ◽  
Anh Tuan Dao ◽  
Nguyen Huu Ke ◽  
Vu Tuan Hung Le
Keyword(s):  
Chemical Method ◽  
Room Temperature ◽  
Zno Nanorods ◽  
Average Height ◽  
X Ray Diffraction ◽  
Wet Chemical Method ◽  
X Ray ◽  
Wet Chemical ◽  
Fabrication And Characterization

In this paper, ZnO nanorods were grown by wet chemical method on p-Si (100) substrate to form n-ZnO nanorods/p-Si (100) heterojunction. The optical, electrical, structural properties of n-ZnO nanorods/p-Si(100) heterojunction were analyzed by the photoluminescence (PL) spectroscopy, [Formula: see text]–[Formula: see text] measurement, X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The room temperature PL spectra reveal the good optical property of the heterojunction with strong UV peak at 385[Formula: see text]nm. The ZnO nanorods were vertically well-aligned on p-Si (100) and had an average height of about 1.6[Formula: see text][Formula: see text]m. The n-ZnO nanorods/p-Si (100) heterojunction also exhibits diode-like-rectifying-behavior.

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