scholarly journals Comparison of Electrical Characterization of AlGaN/GaN HEMT with Multi-finger Gate

2021 ◽  
Author(s):  
Lijun He ◽  
Boyang Zhao ◽  
Chengyun He ◽  
Zhiyang Xie ◽  
Xing Long ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Electrical Characterization ◽  
Drain Current ◽  
Gate Length ◽  
Saturation Current ◽  
Current Output ◽  
Gan Hemt ◽  
Accurate Comparison ◽  
Output Characteristics

Abstract This paper presents an exhaustive TCAD based comparison of the multi-gate and T-gate AlGaN/GaN HEMT. This paper simulates the DC and RF characteristics of the device and makes an accurate comparison. The important feature of the device such as threshold voltage, drain current output characteristics, transconductance, cut-off frequency, and maximum oscillation frequency were obtained. It is concluded that the shape optimization of the HEMT with multi-finger gates and the advantages over traditional T-gate devices. The device of two-finger gate with 50nm spacing has the best output characteristics, and its maximum saturation current is about 110% the size of the device of four-finger gate with 200nm at VGS=0V. And the gm and the gain of the device with 50nm spacing two-finger gate is 76mS/mm larger than the HEMT of three-finger gate with 200nm. In addition, we also conducted a simulation in the case of changing only refers to finger-gate length and cap-gate length. And it is concluded that the two-finger gate HEMT with 250nm finger-gate length and 2.0µm cap-gate length has the best output characteristics, which output current is 0.159 A/µm at VGS=-1.5V. The results show that AlGaN/GaN HEMT with multi-finger gate have great potential for high power and high frequency applications electronic devices.

Electrical Characterization of InAs/(GaIn)Sb Infrared Superlattice Photodiodes for the 8 to 12νm Range

1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cutoff Wavelength ◽  
Saturation Current ◽  
Diffusion Limited ◽  
Saturation Current Density ◽  
Out Of Plane ◽  
Reverse Saturation Current ◽  
The Magnetic Field ◽  
Diode Current

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes

The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

2002 ◽  
Vol 742 ◽  
Author(s):  
Ho-Young Cha ◽  
Christopher I. Thomas ◽  
Goutam Koley ◽  
Lester F. Eastman ◽  
Michael G. Spencer
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
Surface Effects ◽  
Gate Length ◽  
Small Signal ◽  
Saturation Current ◽  
Power Performance ◽  
Dc Characteristics ◽  
Signal Characteristics ◽  
Lower Saturation

ABSTRACTChannel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

2009 ◽  
Vol 615-617 ◽  
pp. 457-460 ◽  
Author(s):  
Filippo Giannazzo ◽  
Martin Rambach ◽  
Dario Salinas ◽  
Fabrizio Roccaforte ◽  
Vito Raineri
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Electrical Characterization ◽  
Electrical Activation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Activation Data ◽  
Accurate Comparison ◽  
Spike Anneal

We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room temperature (RT). An accurate comparison between the electrical activation data obtained by FPP and SCM was carried out. The dependence of the electrically active profiles on annealing time was studied during isothermal (Tann=1600 °C) annealings for times ranging from 0 (spike anneal) to 30 min. By performing isochronal (t=30 min) processes at temperatures from 1550 to 1650 °C, the effect of the annealing temperature on the net doping concentration profiles was studied. Moreover, the activation energy (6.30.3 eV) associated to the process was extracted from the Arrhenius plot of the net active dose. Finally, the effect of the different thermal budgets on the roughening of the Al implanted 4H-SiC surface was also investigated in details by atomic force microscopy.

Recent Advancement in Charge and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

2017 ◽  
Vol 80 (7) ◽  
pp. 261-274
Author(s):  
Andrew David Findlay ◽  
Marshall Wilson ◽  
Alexandre Savtchouk ◽  
John D'Amico ◽  
Jacek Lagowski ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gan Hemt ◽  
Recent Advancement

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Electrical Characterization ◽  
Power Electronic ◽  
Layer Formation ◽  
Transmission Electron ◽  
P Type ◽  
And Chemical Properties

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

Review—Recent Advancement in Charge- and Photo-Assisted Non-Contact Electrical Characterization of SiC, GaN, and AlGaN/GaN HEMT

2017 ◽  
Vol 6 (11) ◽  
pp. S3129-S3140 ◽  
Author(s):  
Marshall Wilson ◽  
Andrew Findlay ◽  
Alexandre Savtchouk ◽  
John D'Amico ◽  
Robert Hillard ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gan Hemt ◽  
Recent Advancement

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

2015 ◽  
Vol 821-823 ◽  
pp. 733-736 ◽  
Author(s):  
Yukimune Watanabe ◽  
Noriyasu Kawana ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Gate Voltage ◽  
Light Emission ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Drain Current ◽  
High Density ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Emission Light

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm2/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

scholarly journals Electrical Characterization of Conductive Threads for Textile Electronics

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 967
Author(s):  
Adrian K. Stavrakis ◽  
Mitar Simić ◽  
Goran M. Stojanović
Keyword(s):  
Internet Of Things ◽  
Electronic Devices ◽  
Electrical Characterization ◽  
Maximum Power ◽  
Electrical Performance ◽  
Microscopic Scale ◽  
Mass Public ◽  
Power Handling ◽  
New Devices

In recent years, advancements in technology are constantly driving the miniaturization of electronic devices, not only in the renowned domain of Internet-of-Things but also in other fields such as that of flexible and textile electronics. As the latter forms a great ecosystem for new devices, that could be functional such as heating garments or sensory, many suppliers have already started producing and bringing to market conductive threads that can be used by researchers and the mass public for their work. However, to date, no extensive characterization has been carried out with respect to the electrical performance of such threads and that is what this article is aiming to amend. Four commercially available threads by two different suppliers were put under test, to establish their limitations in terms of maximum power handling, both continuous and instantaneous. They were subsequently examined at a microscopic scale as well, to verify any potential caveats in their design, and any hidden limitations. A preliminary profile for each of the four threads was successfully established.

scholarly journals Electrical Characterization of TiO2 based OMEGA FinFET Compared with Conventional SiO2 Material

2021 ◽  
Vol 36 (1) ◽  
pp. 513-520
Author(s):  
K. Jonah Swabhijit ◽  
J. Mohana
Keyword(s):  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Control Group ◽  
Experimental Group

Aim: The aim of the study is to perform the electrical characterization of Innovative TiO2 based Omega FinFET and compare it with SiO2 material by varying the oxide thickness ranging from 1nm to 20nm using nanotechnology. Materials and Methods: DFT tool is used to perform the above characterisation. The method was performed for 20 samples per group, TiO2(n=20) and SiO2(n=20). Same samples were used for both the control group and experimental group. Different values of drain current were obtained by varying the thickness for both TiO2 and SiO2. Result: Drain current was obtained for TiO2 (0.645μA) and found better compared with SiO2 (0.58μA). Conclusion: It is concluded that the TiO2 Omega FinFET appears to be better compared to SiO2 based omega FinFET.

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Sign in / Sign up

Export Citation Format

Share Document