A 0.096-mm$^{2}~1$ –20-GHz Triple-Path Noise- Canceling Common-Gate Common-Source LNA With Dual Complementary pMOS–nMOS Configuration

2020 ◽  
Vol 68 (1) ◽  
pp. 144-159 ◽  
Author(s):  
Haohong Yu ◽  
Yong Chen ◽  
Chirn Chye Boon ◽  
Pui-In Mak ◽  
Rui P. Martins
Keyword(s):  
Common Source ◽  
Common Gate ◽  
Noise Canceling

A 1.4mW 900MHz LNA with Noise-Canceling Technique in 130nm CMOS Process

2017 ◽  
Vol 27 (01) ◽  
pp. 1850003 ◽  
Author(s):  
Shaomin Huang ◽  
Zhongpan Yang ◽  
Chao Hua
Keyword(s):  
Power Dissipation ◽  
Noise Figure ◽  
Supply Voltage ◽  
Low Noise ◽  
Common Source ◽  
Cmos Process ◽  
Measurement Results ◽  
Common Gate ◽  
Noise Amplifier ◽  
Noise Canceling

A noise-canceling low noise amplifier (LNA) structure is proposed in this paper. The LNA works in the 900[Formula: see text]MHz ISM band. The techniques of noise canceling and current-reusing are proposed to improve the noise performance and reduce the power dissipation. The noise cancellation schema is realized by mutually canceling the noise currents of the common-source and common-gate amplifiers. A prototype of the LNA is designed and fabricated in a standard 130[Formula: see text]nm CMOS process. Measurement results under a 1.2[Formula: see text]V supply voltage show that the proposed LNA achieves a voltage gain of 18[Formula: see text]dB and a noise figure of 2[Formula: see text]dB. The whole circuit only consumes a power dissipation of 1.4[Formula: see text]mW.

2.2–4.6-GHz Active Quasi-Circulator with > 24-dB Transmit–Receive Isolation

2019 ◽  
Vol 29 (05) ◽  
pp. 2050077
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Danish Kaleem ◽  
Zhi-Gong Wang ◽  
Keping Wang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
The Body ◽  
Common Source ◽  
Cmos Process ◽  
Secondary Effects ◽  
Body Effect ◽  
Chip Area ◽  
Common Gate ◽  
Loading Effects ◽  
Better Than

An active quasi-circulator (AQC) integrated circuit is designed and fabricated in a 0.18-[Formula: see text]m CMOS process. The proposed design is based on a parallel combination of a common-source (CS) stage and a combined common-drain (CD) and common-gate (CG) topology. Scattering matrix of the core AQC circuit is derived considering MOSFET’s secondary effects, particularly the body effect as well as output loading effects. Measurements of the quasi-circulator reveal an insertion loss of [Formula: see text] dB between transmitter-to-antenna ports ([Formula: see text]) and of [Formula: see text] dB between antenna-to-receiver ports ([Formula: see text]), within a frequency band of 2.2–4.6 GHz. The isolation between the transmitter and the receiver ports ([Formula: see text]) is better than 24 dB with a maximum value of 29.5[Formula: see text]dB @ 3.6[Formula: see text]GHz. The power dissipation of the proposed AQC is 40[Formula: see text]mW and it covers an active chip area of 0.677[Formula: see text]mm2.

scholarly journals Design and Simulation Study of Active Baluns Circuits for WiMAX Applications

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Frederick Ray I. Gomez ◽  
John Richard E. Hizon ◽  
Maria Theresa G. De Leon
Keyword(s):  
Phase Difference ◽  
Simulation Study ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Common Source ◽  
Cmos Process ◽  
Common Gate ◽  
Active Balun

The paper presents a design and simulation study of three active balun circuits implemented in a standard 90nm Complementary Metal-Oxide Semiconductor (CMOS) process namely: (1) common-source/drain active balun; (2) common-gate with common-source active balun; and (3) differential active balun.  The active balun designs are intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  All designs achieved gain difference of less than 0.23dB, phase difference of 180° ± 7.1°, and noise figure of 7.2–9.85dB, which are comparable to previous designs and researches.  Low power consumption attained at the most 4.45mW.

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

2014 ◽  
Vol 157 (1) ◽  
pp. 71-80
Author(s):  
Mitchell R. Hunt ◽  
Rana Sayyah ◽  
Cody Mitchell ◽  
Crystal L. McCartney ◽  
Todd C. Macleod ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Common Source ◽  
Common Gate ◽  
The Common ◽  
Effect Transistor
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