Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC ${\hbox{p}}^{+}{\hbox{n}}$ Diode Irradiated With High-Energy Electrons

2011 ◽  
Vol 58 (6) ◽  
pp. 3328-3332 ◽  
Author(s):  
Naoya Iwamoto ◽  
Atsushi Koizumi ◽  
Shinobu Onoda ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
...  
Keyword(s):  
Alpha Particle ◽  
High Energy ◽  
High Energy Electrons ◽  
Induced Charge ◽  
Transient Spectroscopy

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency

2012 ◽  
Vol 717-720 ◽  
pp. 267-270
Author(s):  
Naoya Iwamoto ◽  
Atsushi Koizumi ◽  
Shinobu Onoda ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
...  
Keyword(s):  
Alpha Particle ◽  
Deep Level ◽  
Collection Efficiency ◽  
High Energy ◽  
Electron Trap ◽  
Charge Collection ◽  
High Energy Electron ◽  
Charge Collection Efficiency ◽  
Induced Charge ◽  
Transient Spectroscopy

Defects in electron-irradiated 6H-SiC diodes have been studied by single alpha particle induced charge transient spectroscopy and deep level transient spectroscopy (DLTS) in order to identify critical defects responsible for the charge collection efficiency (CCE) decreased by high-energy electron irradiation. The defect X2 detected by the charge transient spectroscopy and the electron trap Ei detected by the DLTS had a similar activation energy of around 0.50 eV. In addition, the annealing at 200oC completely removed defects X2 and Ei, and restored the CCE. The defect X2 is attributed to the electron trap Ei, and responsible for the decreased CCE.

Radiation-Resistant Properties of Inp-Related Materials

1994 ◽  
Vol 373 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Koshi Ando ◽  
Hidehiko Kamada
Keyword(s):  
Gamma Rays ◽  
Minority Carrier ◽  
Deep Level ◽  
High Energy ◽  
Carrier Injection ◽  
High Energy Electrons ◽  
Radiation Resistant ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

2010 ◽  
Vol 645-648 ◽  
pp. 423-426 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Svetlana Beljakowa ◽  
Bernd Zippelius ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Systematic Study ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient spectroscopy (DLTS); the defects are generated by irradiation with high-energy electrons of 170 keV or 1 MeV.

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

2010 ◽  
Vol 645-648 ◽  
pp. 427-430 ◽  
Author(s):  
Svetlana Beljakowa ◽  
Sergey A. Reshanov ◽  
Bernd Zippelius ◽  
Michael Krieger ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Deep Level ◽  
High Energy ◽  
Annealed Sample ◽  
Double Peak ◽  
Double Peak Structure ◽  
Peak Structure ◽  
Defect Centers ◽  
High Energy Electrons ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped He+-profile. Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) were employed to search for defect centers. AS spectra of as-grown as well as of electron-irradiated (170 keV or 1 MeV) 4H-SiC epilayers reveal the Al acceptor (ΔE(Al) = 200 meV) and an unknown defect (ΔE(SB) = 177 meV), while AS spectra of the He+-implanted and annealed sample show in addition to the Al-acceptor two energetically deeper acceptor-like defect centers (ΔE(RE3) = 255 meV and ΔE(KR3) = 375 meV). The KR3-center is not directly formed by the He+-implantation, it requires an annealing process. The DLTS spectra of the He+-implanted and annealed sample resolve a double-peak structure of the KR3-defect (ΔE(KR3A) = 380 meV and ΔE(KR3B) = 410 meV).

scholarly journals Properties of Elementary Particle Fluxes in Primary Cosmic Rays Measured with the Alpha Magnetic Spectrometer on the International Space Station

2019 ◽  
Vol 209 ◽  
pp. 01007
Author(s):  
Francesco Nozzoli
Keyword(s):  
Electron Flux ◽  
Space Station ◽  
Cosmic Ray ◽  
High Energy ◽  
Precision Measurements ◽  
High Energy Electrons ◽  
Electrons And Positrons ◽  
Positron Flux ◽  
Rigidity Dependence ◽  
Alpha Magnetic Spectrometer

Precision measurements by AMS of the fluxes of cosmic ray positrons, electrons, antiprotons, protons as well as their rations reveal several unexpected and intriguing features. The presented measurements extend the energy range of the previous observations with much increased precision. The new results show that the behavior of positron flux at around 300 GeV is consistent with a new source that produce equal amount of high energy electrons and positrons. In addition, in the absolute rigidity range 60–500 GV, the antiproton, proton, and positron fluxes are found to have nearly identical rigidity dependence and the electron flux exhibits different rigidity dependence.

scholarly journals Polar Middle Atmospheric Responses to Medium Energy Electron (MEE) Precipitation Using Numerical Model Simulations

Atmosphere ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 133
Author(s):  
Ji-Hee Lee ◽  
Geonhwa Jee ◽  
Young-Sil Kwak ◽  
Heejin Hwang ◽  
Annika Seppälä ◽  
...  
Keyword(s):  
Climate Model ◽  
Middle Atmosphere ◽  
Meridional Circulation ◽  
Stratospheric Ozone ◽  
High Energy ◽  
Chemical Changes ◽  
Temperature Changes ◽  
Mesospheric Temperature ◽  
High Energy Electrons ◽  
Circulation Changes

Energetic particle precipitation (EPP) is known to be an important source of chemical changes in the polar middle atmosphere in winter. Recent modeling studies further suggest that chemical changes induced by EPP can also cause dynamic changes in the middle atmosphere. In this study, we investigated the atmospheric responses to the precipitation of medium-to-high energy electrons (MEEs) over the period 2005–2013 using the Specific Dynamics Whole Atmosphere Community Climate Model (SD-WACCM). Our results show that the MEE precipitation significantly increases the amounts of NOx and HOx, resulting in mesospheric and stratospheric ozone losses by up to 60% and 25% respectively during polar winter. The MEE-induced ozone loss generally increases the temperature in the lower mesosphere but decreases the temperature in the upper mesosphere with large year-to-year variability, not only by radiative effects but also by adiabatic effects. The adiabatic effects by meridional circulation changes may be dominant for the mesospheric temperature changes. In particular, the meridional circulation changes occasionally act in opposite ways to vary the temperature in terms of height variations, especially at around the solar minimum period with low geomagnetic activity, which cancels out the temperature changes to make the average small in the polar mesosphere for the 9-year period.

The Effects of High-Energy Electrons on the Charging of Spacecraft Dielectrics

1979 ◽  
Vol 26 (6) ◽  
pp. 5101-5106 ◽  
Author(s):  
M. J. Treadaway ◽  
C. E. Mallon ◽  
T. M. Flanagan ◽  
R. Denson ◽  
E. P. Wenaas
Keyword(s):  
High Energy ◽  
High Energy Electrons

scholarly journals Ovaries of Chrysanthemum Irradiated with High-Energy Photons and High-Energy Electrons Can Regenerate Plants with Novel Traits

Agronomy ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1111
Author(s):  
Natalia Miler ◽  
Iwona Jedrzejczyk ◽  
Seweryn Jakubowski ◽  
Janusz Winiecki
Keyword(s):  
Total Dose ◽  
In Vitro Regeneration ◽  
High Energy ◽  
Mutation Breeding ◽  
Chrysanthemum Morifolium ◽  
Physical Factors ◽  
Strong Impact ◽  
Breeding Method ◽  
High Energy Electrons

Classical mutation breeding using physical factors is a common breeding method for ornamental crops. The aim of our study was to examine the utility of ovaries excised from irradiated inflorescences of Chrysanthemum × morifolium (Ramat.) as explants for breeding purposes. We studied the in vitro regeneration capacity of the ovaries of two chrysanthemum cultivars: ‘Profesor Jerzy’ and ‘Karolina’ preceded by irradiation with high-energy photons (total dose 5, 10 and 15 Gy) and high-energy electrons (total dose 10 Gy). Growth and inflorescence parameters of greenhouse acclimatized regenerants were recorded, and ploidy level was estimated with flow cytometry. The strong impact of genotype on regeneration efficiency was recorded—cultivar ‘Karolina’ produced only 7 viable shoots, while ‘Profesor Jerzy’ produced totally 428 shoots. With an increase of irradiation dose, the regeneration decreased, the least responsive were explants irradiated with 15 Gy high-energy photons and 10 Gy high-energy electrons. Regenerants of ‘Profesor Jerzy’ obtained from these explants possessed shorter stem and flowered later. The highest number of stable, color and shape inflorescence variations were obtained from explants treated with 10 Gy high-energy photons. Variations of inflorescences were predominantly changes of shape—from full to semi-full. New color phenotypes were dark yellow, light yellow and pinkish, among them only the dark yellow phenotype remained stable during second year cultivation. None of the regenerants were haploid. The application of ovaries irradiated within the whole inflorescence of chrysanthemum can be successfully applied in the breeding programs, provided the mother cultivar regenerate in vitro efficiently.

Sign in / Sign up

Export Citation Format

Share Document