Excitation Temperature Imaging of Vacuum Arc Based on Two-Line Radiance Method

Author(s):  
Haruki Ejiri ◽  
Ryo Kikuchi ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Akihiro Suwa ◽  
...  
Author(s):  
Haruki Ejiri ◽  
Ryo Kikuchi ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Akihiro Suwa ◽  
...  

Author(s):  
L. Wan ◽  
R. F. Egerton

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-49-C7-50
Author(s):  
M. Numano ◽  
H. Onishi

1978 ◽  
Vol 125 (8) ◽  
pp. 665-706 ◽  
Author(s):  
G.A. Lyubimov ◽  
V.I. Rakhovskii
Keyword(s):  

2019 ◽  
Vol 139 (5) ◽  
pp. 302-308 ◽  
Author(s):  
Shinji Yamamoto ◽  
Soshi Iwata ◽  
Toru Iwao ◽  
Yoshiyasu Ehara

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.


Author(s):  
Andrej K. Kuleshov ◽  
Vladimir V. Uglov ◽  
V. M. Anishchik ◽  
V. A. Firago ◽  
D. P. Rusalski ◽  
...  

Author(s):  
I. P. Smyaglikov ◽  
N. I. Chubrik ◽  
S.V. Goncharik ◽  
V. V. Azharonok ◽  
L. E. Krat'ko ◽  
...  

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