Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach

2018 ◽  
Vol 282 ◽  
pp. 152-157 ◽  
Author(s):  
Hu Shan Cui ◽  
Kai Hua Cao ◽  
You Guang Zhang ◽  
Hua Gang Xiong ◽  
Jia Qi Wei ◽  
...  

In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.

1996 ◽  
Vol 452 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

AbstractSilicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (EL) with a spectral peak between 1.75 and 1.90e. The LEDs are connected in a common-emitter configuration to integrated vertical pnp bipolar driver transistors. This is the first demonstration of an all-silicon visible light emitter / bipolar transistor optoelectronic integrated circuit. The LED device fabrication, process integration, and optoelectronic device characteristics are discussed.


2017 ◽  
Vol 124 ◽  
pp. 288-294 ◽  
Author(s):  
Barbora Mojrová ◽  
Haifeng Chu ◽  
Christop Peter ◽  
Pirmin Preis ◽  
Jan Lossen ◽  
...  

2008 ◽  
Vol 105 (40) ◽  
pp. 15275-15280 ◽  
Author(s):  
Ian R. Wheeldon ◽  
Joshua W. Gallaway ◽  
Scott Calabrese Barton ◽  
Scott Banta

Here, we present two bifunctional protein building blocks that coassemble to form a bioelectrocatalytic hydrogel that catalyzes the reduction of dioxygen to water. One building block, a metallopolypeptide based on a previously designed triblock polypeptide, is electron-conducting. A second building block is a chimera of artificial α-helical leucine zipper and random coil domains fused to a polyphenol oxidase, small laccase (SLAC). The metallopolypeptide has a helix–random-helix secondary structure and forms a hydrogel via tetrameric coiled coils. The helical and random domains are identical to those fused to the polyphenol oxidase. Electron-conducting functionality is derived from the divalent attachment of an osmium bis-bipyrdine complex to histidine residues within the peptide. Attachment of the osmium moiety is demonstrated by mass spectroscopy (MS-MALDI-TOF) and cyclic voltammetry. The structure and function of the α-helical domains are confirmed by circular dichroism spectroscopy and by rheological measurements. The metallopolypeptide shows the ability to make electrical contact to a solid-state electrode and to the redox centers of modified SLAC. Neat samples of the modified SLAC form hydrogels, indicating that the fused α-helical domain functions as a physical cross-linker. The fusion does not disrupt dimer formation, a necessity for catalytic activity. Mixtures of the two building blocks coassemble to form a continuous supramolecular hydrogel that, when polarized, generates a catalytic current in the presence of oxygen. The specific application of the system is a biofuel cell cathode, but this protein-engineering approach to advanced functional hydrogel design is general and broadly applicable to biocatalytic, biosensing, and tissue-engineering applications.


1977 ◽  
Vol 26 (1) ◽  
pp. 129-131
Author(s):  
N. N. Gerasimenko ◽  
T. I. Kovalevskaya ◽  
V. G. Pan'kin ◽  
K. K. Svitashev ◽  
G. M. Tseitlin

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.


2000 ◽  
Vol 115 (12) ◽  
pp. 683-686 ◽  
Author(s):  
X.C Wu ◽  
W.H Song ◽  
B Zhao ◽  
W.D Huang ◽  
M.H Pu ◽  
...  

2012 ◽  
Vol 195 ◽  
pp. 58-61 ◽  
Author(s):  
Mathieu Foucaud ◽  
Philippe Garnier ◽  
Vincent Joseph ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
...  

Integrated circuits manufacturing still requires several wet etching operations in presence of photo resist. They are usually used to define the gate oxides or metal in a high k metal gate, gate first integration scheme. During this process step, the resist is used for masking and prevents the underneath material from being etched away. Wet treatments are preferred to plasma etching to perform this operation. Indeed, a smooth channels surface is mandatory to obtain a high carriers mobility. It is then critical to avoid any resist lift-off during the wet treatment in order to guarantee the underlying layers integrity. The observation of the lift-off phenomenon (figure 1) points out two possible root causes: 1) a lateral degradation of the covalent bonds at the interface between the polymer and the underlying material, and 2) a vertical resist degradation, due to the penetration of the etching chemicals into the resist down to the underlying material. Previous observations tend to link the lift-off severity to the bake temperature and the oxidation state of the surface on which the resist is coated.


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