Multi-level resistive switching characteristics correlated with microscopic filament geometry in TMO-RRAM

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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Multilevel characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

10.21203/rs.3.rs-276707/v1 ◽

2021 ◽

Author(s):

Sera Kwon ◽

Min-Jung Kim ◽

Kwun-Bum Chung

Keyword(s):

Resistive Switching ◽

High Performance ◽

Sio2 Nanoparticles ◽

Visible Range ◽

Resistive State ◽

Switching Device ◽

Structural Density ◽

Multi Level ◽

Switching Characteristics ◽

Switching Devices

Abstract TiOx-bsed resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95 % in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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Multi-level resistive switching characteristics of W/Co:TiO 2 /fluorine-doped tin oxide (FTO) structures

Solid-State Electronics ◽

10.1016/j.sse.2017.02.008 ◽

2017 ◽

Vol 131 ◽

pp. 34-38 ◽

Cited By ~ 2

Author(s):

Zhao Yang ◽

Zhi Luo ◽

Haitao Tang ◽

Bo Huang ◽

Weiguang Xie

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Multi Level ◽

Switching Characteristics

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Electroforming-less and multi-level resistive switching characteristics in tungsten oxide thin film

Thin Solid Films ◽

10.1016/j.tsf.2019.02.012 ◽

2019 ◽

Vol 674 ◽

pp. 91-96 ◽

Cited By ~ 3

Author(s):

Seunghyup Lee ◽

Ki Hoon Yun ◽

Doeun Kim

Keyword(s):

Thin Film ◽

Tungsten Oxide ◽

Resistive Switching ◽

Oxide Thin Film ◽

Multi Level ◽

Switching Characteristics

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Improvement of multi-level resistive switching characteristics in solution-processed AlOx-based non-volatile resistive memory using microwave irradiation

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa9bc8 ◽

2017 ◽

Vol 33 (1) ◽

pp. 015009 ◽

Cited By ~ 6

Author(s):

Seung-Tae Kim ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Resistive Switching ◽

Resistive Memory ◽

Solution Processed ◽

Multi Level ◽

Switching Characteristics

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Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

Nanomaterials ◽

10.3390/nano9020289 ◽

2019 ◽

Vol 9 (2) ◽

pp. 289 ◽

Cited By ~ 10

Author(s):

Jonas Deuermeier ◽

Asal Kiazadeh ◽

Andreas Klein ◽

Rodrigo Martins ◽

Elvira Fortunato

Keyword(s):

Copper Oxide ◽

Resistive Switching ◽

Dominant Role ◽

Oxide Semiconductor ◽

Multiple Resistance ◽

Bilayer Device ◽

Multi Level ◽

Switching Characteristics ◽

First Time ◽

Resistive Switching Mechanism

Multi-level resistive switching characteristics of a Cu2O/Al2O3 bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.

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Deposition of Bi2O3 Thin Films and Their Resistive Switching Characteristics

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2012.00323 ◽

2012 ◽

Vol 27 (3) ◽

pp. 323-326

Author(s):

Zhen-Guo JI ◽

Jun-Jie WANG ◽

Qi-Nan MAO ◽

Jun-Hua XI

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Switching Characteristics

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Titania Based Nano-ionic Memristive Crossbar Arrays: Fabrication and Resistive Switching Characteristics

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681208666180628122146 ◽

2019 ◽

Vol 9 (4) ◽

pp. 486-493 ◽

Cited By ~ 1

Author(s):

S. Sahoo ◽

P. Manoravi ◽

S.R.S. Prabaharan

Keyword(s):

Resistive Switching ◽

Bottom Electrode ◽

Rf Sputtering ◽

Hysteresis Curve ◽

Bipolar Switching ◽

Post Annealing ◽

Endurance Tests ◽

Bilayer Device ◽

Switching Characteristics ◽

Pinched Hysteresis

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.

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