Potential and Challenges of Diamond Wafer Toward Power Electronics

2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  
Keyword(s):  
Energy Saving ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Power Device ◽  
Surface Finishing ◽  
Low Resistivity ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Century Development ◽  
Device Technology

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications

2013 ◽  
Vol 1490 ◽  
pp. 161-166 ◽  
Author(s):  
B. Kucukgok ◽  
Q. He ◽  
A. Carlson ◽  
A. G. Melton ◽  
I. T. Ferguson ◽  
...  
Keyword(s):  
Power Generation ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Organic Chemical ◽  
Seebeck Coefficients ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors

ABSTRACTThermoelectric materials with stable mechanical and chemical properties at high temperature are required for power generation applications. For example, gas temperatures up to 1000°C are normally present in the waste stream of industrial processes and this can be used for electricity generation. There are few semiconductor materials that can operate effectively at these high temperatures. One solution may be the use of wide bandgap materials, and in particular GaN-based materials, which may offer a traditional semiconductor solution for high temperatures thermoelectric power generation. In particular, the ability to both grow GaN-based materials and fabricate them into devices is well understood if their thermoelectric properties are favorable. To investigate the possibility of using III-Nitride and its alloys for thermoelectric applications, we synthesized and characterized room temperature thermoelectric properties of metal organic chemical vapor deposition grown GaN and InGaN with different carrier concentrations and indium compositions. The promising value of Seebeck coefficients and power factors of Si-doped GaN and InGaN indicated that these materials are suitable for thermoelectric applications.

scholarly journals Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond

2020 ◽  
Vol 161 ◽  
pp. 01107
Author(s):  
A V Solomnikova ◽  
V. A. Lukashkin ◽  
O V Derevianko
Keyword(s):  
Activation Energy ◽  
Wide Bandgap ◽  
Admittance Spectroscopy ◽  
Wide Bandgap Semiconductors ◽  
Experimental Conditions ◽  
Special Aspect ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Semiconductor Diamond ◽  
Bandgap Materials

To improve the performance characteristics of power and high-frequency electronics, wide bandgap semiconductors are now widely used. This paper presents consideration of features arising during exploration of electronic characteristics of wide bandgap materials. We use the admittance spectroscopy method for analyzing free carrier concentration and boron-impurity activation energy in semiconductor diamond. The special aspect that should be taken into account while studying wide bandgap materials is incomplete ionization of impurity. In this work we adjust the experimental conditions, basing on the previous experience, in particular reduce signal/noise ratio and reckon with heat capacity of the samples and substrate. As a result we obtained high quality conductance spectra and activation energy of boron impurity in low-doped diamond.

scholarly journals Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 677
Author(s):  
Javier Ballestín-Fuertes ◽  
Jesús Muñoz-Cruzado-Alba ◽  
José F. Sanz-Osorio ◽  
Erika Laporta-Puyal
Keyword(s):  
Power Electronics ◽  
Smart Grids ◽  
Power Plants ◽  
Thermal Power ◽  
Energy Transition ◽  
Wide Bandgap ◽  
Urban Environments ◽  
Power Semiconductors ◽  
Wide Bandgap Materials ◽  
Bandgap Materials

At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near future.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

Comparative Study on Power Module Architectures for Modularity and Scalability

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
Mei-Chien Lu
Keyword(s):  
Power Electronics ◽  
Hybrid Electric Vehicle ◽  
Wide Bandgap ◽  
Department Of Energy ◽  
Power Module ◽  
Current Trends ◽  
Power Modules ◽  
Bandgap Semiconductors ◽  
Sustainability Challenges

Abstract Silicon carbide (SiC) wide bandgap power electronics are being applied in hybrid electric vehicle (HEV) and electrical vehicles (EV). The Department of Energy (DOE) has set target performance goals for 2025 to promote EV and HEV as a means of carbon emission reduction and long-term sustainability. Challenges include higher expectations on power density, performance, efficiency, thermal management, compactness, cost, and reliability. This study will benchmark state of the art silicon and SiC technologies. Power modules used in commercial traction inverters are analyzed for their within-package first-level interconnect methods, module architecture, and integration with cooling structure. A few power module package architectures from both industry-adopted standards and proposed patented technologies are compared in modularity and scalability for integration into inverters. The current trends of power module architectures and their integration into inverter are also discussed. The development of an eco-system to support the wide bandgap semiconductors-based power electronics is highlighted as an ongoing challenge.

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