A compact ring delay line for high speed synchronous DRAM

Author(s):  
Seong-Jin Jang ◽  
Seong-Ho Han ◽  
Chang-Sun Kim ◽  
Young-Hyun Jun ◽  
Hoi-Jun Yoo
Keyword(s):  
1997 ◽  
Vol 22 (23) ◽  
pp. 1811 ◽  
Author(s):  
G. J. Tearney ◽  
B. E. Bouma ◽  
J. G. Fujimoto

2003 ◽  
Vol 42 (4) ◽  
pp. 640 ◽  
Author(s):  
Pei-Lin Hsiung ◽  
Xingde Li ◽  
Christian Chudoba ◽  
Ingmar Hartl ◽  
Tony H. Ko ◽  
...  

1991 ◽  
Author(s):  
M. Mark Colavita ◽  
Braden E. Hines ◽  
Michael Shao ◽  
George J. Klose ◽  
B. V. Gibson

2015 ◽  
Vol 24 (07) ◽  
pp. 1550100
Author(s):  
Rui Ma ◽  
Zhangming Zhu ◽  
Maliang Liu ◽  
Ping Gan ◽  
Yintang Yang

In this paper, a novel accurate analog-based 50% duty cycle corrector (DCC) for high-speed and high-resolution operations is presented. Due to the performance limitations of conventional DCCs, such as a confined locking range and overtone locking, a novel delay line using forward-body-bias technique and reset circuit are adopted to enlarge the locking range of the proposed DCC. Simulated results based on the standard 0.18 μm 1.8 V standard CMOS process show that output duty cycle error is less than ±1% over an input frequency range of 50–800 MHz. The peak-to-peak jitter at 800 MHz is 789.77 fs with a power consumption of 11.09 mW. The active layout area of the proposed DCC is 0.21 × 0.21 mm2.


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