Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET

2010 ◽  
Vol 87 (11) ◽  
pp. 2241-2246 ◽  
Author(s):  
Chih-Ren Hsieh ◽  
Yung-Yu Chen ◽  
Jen-Chung Lou
Keyword(s):  
Silicate Glass ◽  
Passivation Layer ◽  
Electrical Characteristics

Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

2014 ◽  
Vol 61 (8) ◽  
pp. 2774-2778 ◽  
Author(s):  
Quang Ho Luc ◽  
Edward Yi Chang ◽  
Hai Dang Trinh ◽  
Yueh Chin Lin ◽  
Hong Quan Nguyen ◽  
...  
Keyword(s):  
Passivation Layer ◽  
Electrical Characteristics

Electrical Enhancement of Polycrystalline Silicon Thin-Film Transistors Using Fluorinated Silicate Glass Passivation Layer

2008 ◽  
Vol 47 (2) ◽  
pp. 847-852 ◽  
Author(s):  
Chia-Wen Chang ◽  
Chih-Kang Deng ◽  
Jiun-Jia Huang ◽  
Tong-Yi Wang ◽  
Tan-Fu Lei
Keyword(s):  
Thin Film ◽  
Silicate Glass ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Passivation Layer ◽  
Silicon Thin Film

scholarly journals Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

2018 ◽  
Author(s):  
Kyungsoo Jang ◽  
Pham Duy Phong ◽  
Yoonjung Lee ◽  
Joonghyun Park ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Surface Passivation ◽  
Thin Film Transistor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Hydrogen Dilution ◽  
Defect Sites

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using an a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with a conventional LTPS TFT. Moreover, the leakage current measured at a VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered a candidate for high performance LTPS TFTs.

scholarly journals Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 161 ◽  
Author(s):  
Kyungsoo Jang ◽  
Youngkuk Kim ◽  
Pham Duy Phong ◽  
Younjung Lee ◽  
Joonghyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Surface Passivation ◽  
Thin Film Transistor ◽  
Passivation Layer ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Hydrogen Dilution ◽  
Defect Sites

We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature polycrystalline silicon thin film transistors (LTPS TFTs). The intrinsic a-Si:H layer was optimized by hydrogen dilution and its structural and electrical characteristics were investigated. The a-Si:H layer in the transition region between a-Si:H and µc-Si:H resulted in superior device characteristics. Using a-Si:H passivation layer, the field-effect mobility of the LTPS TFT was increased by 78.4% compared with conventional LTPS TFT. Moreover, the leakage current measured at VGS of 5 V was suppressed because the defect sites at the poly-Si grain boundaries were well passivated. Our passivation layer, which allows thorough control of the crystallinity and passivation-quality, should be considered as a candidate for high performance LTPS TFTs.

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