Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors

2021 ◽  
Author(s):  
Matthias Sinnwell ◽  
Philipp Doering ◽  
Rachid Driad ◽  
Michael Dammann ◽  
Michael Mikulla ◽  
...  
Keyword(s):  
Deep Level ◽  
Electron Transistors

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

2018 ◽  
Vol 124 (14) ◽  
pp. 145703 ◽  
Author(s):  
Esmat Farzana ◽  
Humberto M. Foronda ◽  
Christine M. Jackson ◽  
Towhidur Razzak ◽  
Zeng Zhang ◽  
...  
Keyword(s):  
Deep Level ◽  
Deep Level Defect

Characterization of electrically active deep level defects in 4H and 6H SiC

1997 ◽  
Vol 6 (10) ◽  
pp. 1388-1391 ◽  
Author(s):  
J.P. Doyle ◽  
M.O. Aboelfotoh ◽  
B.G. Svensson ◽  
A. Schöner ◽  
N. Nordell
Keyword(s):  
Deep Level

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy
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