Experimental and Numerical Evaluation on Optical Properties of Al-Doped ZnO Film Materials

2014 ◽  
Vol 97 (11) ◽  
pp. 3549-3554 ◽  
Author(s):  
Ping Yang ◽  
Lin Deng ◽  
Liqiang Zhang ◽  
Haiying Yang
2014 ◽  
Vol 311 ◽  
pp. 648-658 ◽  
Author(s):  
A. Fouzri ◽  
M.A. Boukadhaba ◽  
A. Touré ◽  
N. Sakly ◽  
A. Bchetnia ◽  
...  

2011 ◽  
Vol 14 (3-4) ◽  
pp. 257-260 ◽  
Author(s):  
Yue Zhao ◽  
Mingtao Zhou ◽  
Zhiyong Lv ◽  
Zhao Li ◽  
Jian Huang ◽  
...  

2010 ◽  
Vol 45 (9) ◽  
pp. 1046-1050 ◽  
Author(s):  
Yue Zhao ◽  
Zhao Li ◽  
Zhiyong Lv ◽  
Xiaoyan Liang ◽  
Jiahua Min ◽  
...  

2013 ◽  
Vol 22 (2) ◽  
pp. 024202 ◽  
Author(s):  
Xian-Wei Zhao ◽  
Xiao-Yong Gao ◽  
Xian-Mei Chen ◽  
Chao Chen ◽  
Meng-Ke Zhao

2013 ◽  
Vol 641-642 ◽  
pp. 547-550 ◽  
Author(s):  
Ying Xiang Yang ◽  
Hong Lin Tan ◽  
Cheng Lin Ni ◽  
Chao Xiang

Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.


2017 ◽  
Vol 17 ◽  
pp. 171-178 ◽  
Author(s):  
T. Ganesh ◽  
K. Perumal ◽  
R. Kumar ◽  
N. Bhaskar

Aluminium (Al) doped Zinc oxide (ZnO) thin films of different thicknesses were prepared on glass substrates by sol-gel spin coating method. The effect of thicknesses on micro-structural and optical properties was investigated for transparent conducting oxide (TCO) application in solar cells and other optoelectronic applications. Grazing incidence x-ray diffraction (GIXRD) showed maximum orientation along (002) plane of c-axis. The variation of different structural parameters like crystallite size, micro-strain, c-axis strain, dislocation density as a function of film thickness was investigated. The FTIR spectra confirmed the formation of Al-doped ZnO film. FESEM images showed spherical shaped nanosized grains and formation of micro pores. The optical absorption increased and absorption peak shifted towards longer wavelength (red shift) with increase in the thickness of the film respectively. The optical transmittance of all the films has a transparency of more than 75% in the visible region. The optical band gap (Eg) decreased with increase in the film thickness. The diffused reflectance (DRS) showed very low reflectance in the region of 400-800 nm, but increased in the 800-900 nm region. Photoluminescence (PL) spectra of the prepared films showed intense band edge UV and low intense visible emissions respectively. The effect of thickness of Al-doped ZnO film on micro-structure, surface morphology, optical absorption and transmittance, diffused reflectance and PL have been investigated and the results are reported.


2015 ◽  
Vol 1112 ◽  
pp. 124-127
Author(s):  
Resti Marlina ◽  
Andrivo Rusydi ◽  
Yudi Darma

Optical properties analysis of ZnO and Cu-doped ZnO films on Pt substrate have been probed by using Spectroscopic Ellipsometry (SE) at room temperature. Here, we study the optical transitions and the evolution of excitonic states by means of the critical points (CP) analysis. The second derivative spectra of dielectric function (CP analysis) show the transition of excitonic peak at the fundamental absorption edge (E0). Corresponds to e1 spectra, the peak of refractive index (n) at around 3.3 eV is broaden by introducing Cu dopant. This peak is assigned as excitonic states and the peak broadening is mainly due to the screening of excitons. This excitonic screening is more pronounced in the second derivative spectra of dielectric function where the peaks intensity is decreased upon Cu dopant. In additions, effective number of carrier concentrations of ZnO film shows a high number as high as ~1022 cm-3. Furthermore, the addition of Cu doping -in this case 8 in at.%- does not significantly affect the effective number of ZnO film carrier concentration. This result confirms the strong interaction between ZnO film and Pt substrate and negligible contribution of Cu dopant for carrier concentration.


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