scholarly journals Corrigendum to “Synthesis of bulk silicon oxynitride glass through nitridation of SiO 2 aerogels and determination of Tg ”

2021 ◽  
Author(s):  
Yuta Osawa ◽  
Kenichiro Iwasaki ◽  
Takayuki Nakanishi ◽  
Atsuo Yasumori ◽  
Yoshio Matsui ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Bulk Silicon ◽  
Oxynitride Glass

Synthesis of bulk silicon oxynitride glass through nitridation of SiO 2 aerogels and determination of T g

2021 ◽  
Author(s):  
Yuta Osawa ◽  
Kenichiro Iwasaki ◽  
Takayuki Nakanishi ◽  
Atsuo Yasumori ◽  
Yoshio Matsui ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Bulk Silicon ◽  
Oxynitride Glass

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Room Temperature ◽  
Carrier Lifetime ◽  
Detection Sensitivity ◽  
Bulk Silicon ◽  
Recombination Activity ◽  
P Type ◽  
Copper Detection ◽  
Charge Carrier Lifetime

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.

Stresses in Passivated Films

1990 ◽  
Vol 188 ◽  
Author(s):  
Paul A. Flinn
Keyword(s):  
Tensile Stress ◽  
Accurate Determination ◽  
Silicon Oxynitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Curvature Measurement ◽  
Formation Of Cracks ◽  
Patterned Films ◽  
Strain Tensors

ABSTRACTAlthough wafer curvature measurement provides a rapid and accurate determination of stress in a uniform thin film, the technique is not applicable to patterned films. To study the stress in metal lines, and the effect of passivation on that stress, it is necessary to use X-ray diffraction. To obtain the sensitivity and precision required, a generalized focusing diffractometer (GFD), that had been developed especially for work on thin films, was used in this study.The elastic strain tensors for aluminum and aluminum-silicon films and patterned lines were determined by X-ray diffraction. The corresponding stress tensors were calculated with the use of the known elastic constants of aluminum. The effect of various oxide and oxynitride passivations was investigated. Passivation over uniform metal films has very little effect, while passivation over patterned metal results in substantial triaxial tensile stress in the metal. Contrary to the conventional wisdom, high compressive stress in the passivation does not result in additional tensile stress in the metal. A possible explanation for the frequently observed deleterious effect (increased tendency for formation of cracks and voids) of highly compressive silicon nitride and silicon oxynitride passivations will be discussed.

Preparation of silicon oxynitride glass fibers by ammonolysis of silica gels

1991 ◽  
Vol 134 (3) ◽  
pp. 199-207 ◽  
Author(s):  
Masahiro Sekine ◽  
Singo Katayama ◽  
Mamoru Mitomo
Keyword(s):  
Glass Fibers ◽  
Silicon Oxynitride ◽  
Silica Gels ◽  
Oxynitride Glass

Characteristics of Hydrogen Effusion from the Si-H Bonds in Si Rich Silicon Oxynitride Films for Nanocrystalline Silicon Based Photovoltaic Applications

2013 ◽  
Vol 854 ◽  
pp. 69-74 ◽  
Author(s):  
Andrey Sarikov ◽  
M. Voitovych ◽  
Igor Lisovskyy ◽  
V. Naseka ◽  
A. Hartel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Oxynitride ◽  
Tandem Solar Cells ◽  
Si Nanocrystals ◽  
Photovoltaic Applications ◽  
Silicon Based ◽  
Kinetics Of ◽  
Hydrogen Effusion

This work is devoted to determination of characteristics of hydrogen effusion from SiH bonds in Si rich silicon oxynitride (SRON) films, obtained by plasma enhanced chemical vapor deposition, as a result of thermal anneals at temperatures from 400 to 800°C. The values of the concentrations of SiH bonds in HSi (Si3nOn) (0 n 3) complexes contributing to the structure of SRON films are obtained from the analysis of infrared absorption spectra in the range of 2000-2400 cm1. The kinetics of the decrease of SiH concentrations as a result of anneals is described in the framework of a model with distributed activation energy of hydrogen emission. The median value and the mean-square deviation of this distribution as well as the attempt frequencies of SiH bond breaks are determined from the comparison of experimental and calculated SiH concentrations in SRON films. These characteristics are compatible with such characteristics found for the case of the depassivation of PbH centers at the Si/SiO2 interfaces. Obtained results are useful for the controlled formation of the layers of Si nanocrystals in dielectric matrix for Si based tandem solar cells applications.

Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy

2005 ◽  
Vol 44 (3) ◽  
pp. 1301-1305 ◽  
Author(s):  
Yuuichi Kamimuta ◽  
Masahiro Koike ◽  
Tsunehiro Ino ◽  
Masamichi Suzuki ◽  
Masato Koyama ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Silicon Oxynitride ◽  
Band Alignment

Determination of the valence band structure of an alkali phosphorus oxynitride glass: A synchrotron XPS study on LiPON

2014 ◽  
Vol 321 ◽  
pp. 55-60 ◽  
Author(s):  
André Schwöbel ◽  
Ruben Precht ◽  
Markus Motzko ◽  
Mercedes A. Carrillo Solano ◽  
Wolfram Calvet ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Valence Band Structure ◽  
Oxynitride Glass ◽  
Xps Study
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