Hydrolysis protection and sintering of aluminum nitride powders with yttria nanofilms

2022 ◽  
Author(s):  
Rebecca J. O'Toole ◽  
Chanel Hill ◽  
Peter J. Buur ◽  
Christopher J. Bartel ◽  
Christopher J. Gump ◽  
...  
Keyword(s):  
Aluminum Nitride

Construction of plastic contact deformation maps on ceramics: a case study on aluminum nitride

1996 ◽  
Vol 54 ◽  
pp. 636-637
Author(s):  
D. L. Callahan
Keyword(s):  
Plastic Deformation ◽  
Aluminum Nitride ◽  
Mechanical Response ◽  
Three Dimensional ◽  
Bright Field Image ◽  
Perfectly Plastic ◽  
Contrast Analysis ◽  
Deformation Patterns

Modern polishing, precision machining and microindentation techniques allow the processing and mechanical characterization of ceramics at nanometric scales and within entirely plastic deformation regimes. The mechanical response of most ceramics to such highly constrained contact is not predictable from macroscopic properties and the microstructural deformation patterns have proven difficult to characterize by the application of any individual technique. In this study, TEM techniques of contrast analysis and CBED are combined with stereographic analysis to construct a three-dimensional microstructure deformation map of the surface of a perfectly plastic microindentation on macroscopically brittle aluminum nitride.The bright field image in Figure 1 shows a lg Vickers microindentation contained within a single AlN grain far from any boundaries. High densities of dislocations are evident, particularly near facet edges but are not individually resolvable. The prominent bend contours also indicate the severity of plastic deformation. Figure 2 is a selected area diffraction pattern covering the entire indentation area.

CBED analysis of impurity distributions in AlN

1990 ◽  
Vol 48 (4) ◽  
pp. 214-215
Author(s):  
Daniel Callahan ◽  
G. Thomas
Keyword(s):  
Aluminum Nitride ◽  
Bulk Material ◽  
Strong Dependence ◽  
Lattice Parameter ◽  
Promising Technique ◽  
Nitride Ceramics ◽  
Surface Phases ◽  
Convergent Beam ◽  
Oxygen Impurities

Oxygen impurities may significantly influence the properties of nitride ceramics with a strong dependence on the microstructural distribution of the impurity. For example, amorphous oxygen-rich grain boundary phases are well-known to cause high-temperature mechanical strength degradation in silicon nitride whereas solutionized oxygen is known to decrease the thermal conductivity of aluminum nitride. Microanalytical characterization of these impurities by spectral methods in the AEM is complicated by reactions which form oxygen-rich surface phases not representative of the bulk material. Furthermore, the impurity concentrations found in higher quality ceramics may be too low to measure by EDS or PEELS. Consequently an alternate method for the characterization of impurities in these ceramics has been investigated.Convergent beam electron diffraction (CBED) is a promising technique for the study of impurity distributions in aluminum nitride ceramics. Oxygen is known to enter into stoichiometric solutions with AIN with a consequent decrease in lattice parameter.

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

Aluminum Nitride Thin Film Based Surface Acoustic Wave Sensors

2008 ◽  
Author(s):  
A. Kabulski ◽  
V. R. Pagán ◽  
D. Cortes ◽  
R. Burda ◽  
O. M. Mukdadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Surface Acoustic Wave ◽  
Acoustic Wave Sensors ◽  
Wave Sensors

Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocompositesvia Transamination of M(NMe2)32, M = Al, Al/Ga (1/1).

1998 ◽  
Author(s):  
J. F. Janik ◽  
R. L. Wells ◽  
J. L. Coffer ◽  
J. V. St John ◽  
W. T. Pennington
Keyword(s):  
Gallium Nitride ◽  
Aluminum Nitride ◽  
Aluminum Gallium Nitride ◽  
Nanocrystalline Aluminum

Structure and Properties of Aluminum Nitride and AlON Ceramics

2002 ◽  
Author(s):  
James W. McCauley
Keyword(s):  
Aluminum Nitride ◽  
Structure And Properties

Piezoelectric Response to Pressure of Aluminum Nitride Thin Films Prepared on Nickel-Based Superalloy Diaphragms

2006 ◽  
Vol 45 (6A) ◽  
pp. 5169-5173 ◽  
Author(s):  
Ichiro Ohshima ◽  
Morito Akiyama ◽  
Akira Kakami ◽  
Tatsuo Tabaru ◽  
Toshihiro Kamohara ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Piezoelectric Response ◽  
Nickel Based Superalloy

scholarly journals Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Thin Aluminum

scholarly journals Effect of nitrogen gas pressure and ionization current on deposition of aluminum nitride film by reactive ion plating.

1987 ◽  
Vol 38 (6) ◽  
pp. 228-233
Author(s):  
Saburou KUWANO ◽  
Masahiro SUGIYAMA ◽  
Yoshio SHIBUYA ◽  
Terunori OOTAKE ◽  
Takeo OKI
Keyword(s):  
Aluminum Nitride ◽  
Gas Pressure ◽  
Nitride Film ◽  
Nitrogen Gas ◽  
Ion Plating ◽  
Ionization Current

Experimental Optical Properties of Single-Photon Emitters in Aluminum Nitride Films

2021 ◽  
Author(s):  
Yongzhou Xue ◽  
Tongbo Wei ◽  
Hongliang Chang ◽  
Dongdong Liang ◽  
Xiuming Dou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Aluminum Nitride ◽  
Single Photon ◽  
Single Photon Emitters
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