scholarly journals Effect of nitrogen gas pressure and ionization current on deposition of aluminum nitride film by reactive ion plating.

1987 ◽  
Vol 38 (6) ◽  
pp. 228-233
Author(s):  
Saburou KUWANO ◽  
Masahiro SUGIYAMA ◽  
Yoshio SHIBUYA ◽  
Terunori OOTAKE ◽  
Takeo OKI
Keyword(s):  
Aluminum Nitride ◽  
Gas Pressure ◽  
Nitride Film ◽  
Nitrogen Gas ◽  
Ion Plating ◽  
Ionization Current

Study on Arc Ion Plating Nitride Films of Microscopic Morphology and Micro-Hardness

2011 ◽  
Vol 306-307 ◽  
pp. 274-279
Author(s):  
Qing Tao ◽  
Yan Wei Sui ◽  
Sun Zhi ◽  
Wei Song
Keyword(s):  
Thin Films ◽  
Steel Substrate ◽  
Nitride Film ◽  
Composition Analysis ◽  
Micro Hardness ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Tin Thin Films ◽  
Research Procedure ◽  
Microscopic Morphology

AlN and TiN thin films are widely used in electronic devices and acoustic material and other fields because of its unique merit, the preparation of nitride thin films by using the arc ion plating has not been a systematic and deep study. The article presents our research procedure which the AlN and TiN thin films are deposited on stainless steel substrate by arc ion plating (AIP). The characteristics of thin films, for example microstructure, morphology, composition analysis and hardness, are examined and analyzed. The results showed that: Droplet-like particles appear in the microstructure of nitride thin films, and the grain size of droplet-like particles in AlN thin films is greater than in TiN thin films. The micro-hardness of nitride films preparation in experiment has improved significantly, and establish firmly basic for extending the application field of nitride film.

Silicon- and aluminum-nitride films deposited by reactive low-voltage ion plating and reactive dc-magnetron sputtering

1994 ◽  
Author(s):  
G. W. Vogl ◽  
K. H. Monz ◽  
Quang D. Nguyen ◽  
Michael Huter ◽  
Eduard P. Rille ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Low Voltage ◽  
Dc Magnetron Sputtering ◽  
Ion Plating

scholarly journals Preparation of Aluminum Nitride Thin Films by RF Reactive Ion Plating.

Shinku ◽  
2004 ◽  
Vol 47 (6) ◽  
pp. 452-456
Author(s):  
Hiroshi OKANO ◽  
Tomohiro MASUDA ◽  
Akihiro MICHIHISA ◽  
Koji HASEGAWA
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ion Plating

Formation of Aluminum Nitride Film for High Power Soft X-Ray Source Using Ion-Beam Assisted Deposition Method

2005 ◽  
pp. 43-46
Author(s):  
Takaomi Matsutani ◽  
Masato Kiuchi ◽  
Kiyotaka Shirouzu ◽  
Akihiro Yoshioka ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
High Power ◽  
Ion Beam ◽  
Nitride Film ◽  
Deposition Method ◽  
X Ray ◽  
Ion Beam Assisted Deposition

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

2004 ◽  
Vol 462-463 ◽  
pp. 15-18 ◽  
Author(s):  
Chang Seo Park ◽  
Byung Jin Cho ◽  
N. Balasubramanian ◽  
Dim-Lee Kwong
Keyword(s):  
Aluminum Nitride ◽  
Buffer Layer ◽  
Feasibility Study ◽  
Nitride Film ◽  
Metal Gate ◽  
Thin Aluminum ◽  
Dual Metal

Substrate composition effects on the interfacial fracture of tantalum nitride films

1999 ◽  
Vol 14 (6) ◽  
pp. 2306-2313 ◽  
Author(s):  
N. R. Moody ◽  
A. Strojny ◽  
D. L. Medlin ◽  
A. Talin ◽  
W. W. Gerberich
Keyword(s):  
Aluminum Nitride ◽  
Surface Hardness ◽  
Tantalum Nitride ◽  
Nitride Film ◽  
Interface Composition ◽  
Near Surface ◽  
Substrate Composition ◽  
A Value ◽  
Composition And Structure ◽  
Film Substrate

In this study we combined nanoscratch testing with a multilayer sapphire and aluminum nitride single-substrate system to determine the effects of interface composition and structure on susceptibility to fracture of hard, thin tantalum nitride films. Nanoindentation tests showed that the elastic moduli of the tantalum nitride and aluminum nitride films, as well as the sapphire substrate, were essentially equal at 400 GPa. On both portions of the substrate, these tests also showed that near surface hardness was near 35 GPa. Nanoscratch tests triggered long blisters and circular spalls on both the sapphire and aluminum nitride portions of the substrate. The blisters showed that the tantalum nitride film was subjected to a compressive residual stress of −6.7 GPa. The spalls showed that failure occurred along the tantalum nitride film-substrate interface regardless of substrate composition. Most importantly, the blisters and spalls showed that the mode I componentof the fracture energies was essentially equal on both substrate materials at a value near 3.1 J/m2. These energies are on the order of the energies for metallic bonding.

Formation of Aluminum Nitride Films by Gas Nitriding

2014 ◽  
Vol 625 ◽  
pp. 651-656 ◽  
Author(s):  
Masashi Yoshida ◽  
Zhou Tao ◽  
Noah Utsumi
Keyword(s):  
Aluminum Alloys ◽  
Aluminum Nitride ◽  
Electron Probe ◽  
Treatment Time ◽  
Film Surface ◽  
Nitride Film ◽  
X Ray Diffraction ◽  
Good Adhesion ◽  
X Ray ◽  
Gas Nitriding

In this study, aluminum alloys were subjected to nitriding at 823 K for 0–18.0 ks using alumina and magnesium powders for improving their radiation performance. After nitriding, aluminum nitride films were formed on the aluminum substrate. The thickness of the formed films varied from 1.5 to 11 μm, and the color of the film surface was dark brown or black. The thickness of the aluminum nitride film increased with an increase in the treatment time. X-ray diffraction and electron probe microanalysis results showed that the film was composed of aluminum nitride, alumina, aluminum, and magnesium. Further, the film showed good adhesion at 0 ks.

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