scholarly journals Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD

2014 ◽  
Vol 7 (1) ◽  
Author(s):  
D. Aryanto ◽  
Z. Othaman ◽  
A. K. Ismail ◽  
A. S. Ameruddin
Keyword(s):  
Quantum Dots ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Indium Composition ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Surface Changes

The single layer In0.5Ga0.5As quantum dots (QDs) were grown on a thin InxGa1-xAs underlying layer by metal-organic chemical vapor deposition(MOCVD) via Stranski-Krastanow growth mode. The effect of different indium composition in the InxGa1-xAs underlying layer was investigated usingatomic force microscopy (AFM). AFM images show that the QDs structures were formed on the surface. The dots formation on the surface changes withdifferent composition of InxGa1-xAs underlying layer. Increasing indium composition in the underlying layer resulted to formation of higher density andsmaller size dots. Several large dots were also formed on the surface. Growing of underlying layer reduces the lattice mismatch between In0.5Ga0.5As andGaAs, and decreases the critical thickness of the dots. This strongly influences the dots nucleation on the surface. Growth of quantum dots usingunderlying layer is one way to modify dot formation in order to achieve uniform QDs of right size and high density, which are essential for QDs deviceapplications.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

2019 ◽  
Vol 114 (24) ◽  
pp. 241103 ◽  
Author(s):  
Caroline E. Reilly ◽  
Cory Lund ◽  
Shuji Nakamura ◽  
Umesh K. Mishra ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Infrared Luminescence ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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