Development of Compact Models for Electronics Cooling: Using the Multigrid Operator to Generate Reduced-Order Description of Devices

The need for compact models for ICs is a well-recognized problem in electronics cooling simulations of systems containing multiple PCBs and many devices per board. The disparate length scales inherent in the problem and the necessity of resolving these size scales render the computational problem intractable. Many resistance-capacitance (RC) network compact models have been proposed in the literature. We present a methodology to automatically construct both the topology and characteristics of the reduced-order or compact models of devices [primarily Integrated Circuit (IC) packages] for use in system-level simulations using the multigrid operator. The multigrid technique has been extensively used over the past 20 years to accelerate the solution of linear systems. In addition to automatically generating both the RC network topology and its values, the procedure is general enough to be applicable for complex IC device types (such as multichip modules), stack-up dies, distributed sources on the die, DC-DC converters, and devices such as hard disk drives.

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Development of Compact Models for Electronics Cooling: Using the Multigrid Operator to Generate Reduced Order Description of Devices

Electronic and Photonic Packaging, Electrical Systems and Photonic Design, and Nanotechnology ◽

10.1115/imece2003-42372 ◽

2003 ◽

Author(s):

Prabhu Sathyamurthy ◽

Manoj Nagulapally ◽

Rajesh Nair

Keyword(s):

Integrated Circuit ◽

Hard Disk Drives ◽

Electronics Cooling ◽

System Level ◽

Disk Drives ◽

Reduced Order ◽

The Past ◽

Compact Models ◽

System Level Simulations ◽

Size Scales

The need for compact models for ICs is a well-recognized problem in electronics cooling simulations of systems containing multiple PCBs and many devices per board. The disparate length scales inherent in the problem and the necessity of resolving these size scales renders the computational problem intractable. Many resistance-capacitance (RC) network compact models have been proposed in the literature. We present a methodology to automatically construct both the topology and characteristics of the reduced-order or compact models of devices (primarily Integrated Circuit (IC) packages) for use in system-level simulations using the multigrid operator. The multigrid technique has been extensively used over the past 20 years to accelerate the solution of liner systems. In addition to automatically generating both the RC network topology and its values, the procedure is general enough to be applicable for complex IC device types like Multi-Chip Modules (MCMs), stack up dies, distributed sources on the die, DC-DC converters and devices such as hard disk drives.

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SYSTEM LEVEL SIMULATIONS OF MEMS BASED ON REDUCED ORDER FINITE ELEMENT MODELS

International Journal of Computational Engineering Science ◽

10.1142/s1465876303001332 ◽

2003 ◽

Vol 04 (02) ◽

pp. 385-388 ◽

Cited By ~ 7

Author(s):

F. BENNINI ◽

J. MEHNER ◽

W. DÖTZEL

Keyword(s):

Finite Element ◽

System Level ◽

Finite Element Models ◽

Reduced Order ◽

System Level Simulations

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Operational Shock Response of Ultrathin Hard Disk Drives

2014 Conference on Information Storage and Processing Systems ◽

10.1115/isps2014-6962 ◽

2014 ◽

Author(s):

Shengkai Yu ◽

Jianqiang Mou ◽

Wei Hua ◽

Weidong Zhou ◽

Chye Chin Tan

Keyword(s):

Hard Disk Drives ◽

Hard Disk ◽

Element Model ◽

System Level ◽

Disk Drives ◽

Disk System ◽

Shock Response ◽

Shock Simulation ◽

Resistance Performance ◽

Operational Shock

Operational shock is one of key challenges for designing the ultrathin mobile hard disk drives (HDDs) due to the reduced thickness of mechanical components and their stiffness. Some simplifications in the conventional methods for operational shock simulation are not valid. In this paper, a method for system level modelling and simulation of operational shock response of HDDs has been proposed by coupling the structural finite element model of the HDD and the air bearing model. The dynamic shock response of the head-disk system in a 5 mm ultrathin HDD design is investigated. The effects of drive base stiffness, disk-ramp contact, disk spinning and disk distortion have been studied. The results reveal that the drive base deformation and ramp contact are critical for the operational shock resistance performance of ultrathin drives.

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Multi-instance deep learning based on attention mechanism for failure prediction of unlabeled hard disk drives

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/tim.2021.3068180 ◽

2021 ◽

pp. 1-1

Author(s):

Guochao Wang ◽

Yu Wang ◽

Xiaojie Sun

Keyword(s):

Deep Learning ◽

Hard Disk Drives ◽

Failure Prediction ◽

Hard Disk ◽

Attention Mechanism ◽

Disk Drives

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Design and Implementation of a Farrow-Interpolator-Based Digital Front-End in LTE Receivers for Carrier Aggregation

Electronics ◽

10.3390/electronics10030231 ◽

2021 ◽

Vol 10 (3) ◽

pp. 231

Author(s):

Chester Sungchung Park ◽

Sunwoo Kim ◽

Jooho Wang ◽

Sungkyung Park

Keyword(s):

Integrated Circuit ◽

Building Block ◽

Orthogonal Frequency Division Multiplexing ◽

Critical Path ◽

Phase Error ◽

System Level ◽

Comb Filter ◽

Carrier Aggregation ◽

Path Delay ◽

Front End

A digital front-end decimation chain based on both Farrow interpolator for fractional sample-rate conversion and a digital mixer is proposed in order to comply with the long-term evolution standards in radio receivers with ten frequency modes. Design requirement specifications with adjacent channel selectivity, inband blockers, and narrowband blockers are all satisfied so that the proposed digital front-end is 3GPP-compliant. Furthermore, the proposed digital front-end addresses carrier aggregation in the standards via appropriate frequency translations. The digital front-end has a cascaded integrator comb filter prior to Farrow interpolator and also has a per-carrier carrier aggregation filter and channel selection filter following the digital mixer. A Farrow interpolator with an integrate-and-dump circuitry controlled by a condition signal is proposed and also a digital mixer with periodic reset to prevent phase error accumulation is proposed. From the standpoint of design methodology, three models are all developed for the overall digital front-end, namely, functional models, cycle-accurate models, and bit-accurate models. Performance is verified by means of the cycle-accurate model and subsequently, by means of a special C++ class, the bitwidths are minimized in a methodic manner for area minimization. For system-level performance verification, the orthogonal frequency division multiplexing receiver is also modeled. The critical path delay of each building block is analyzed and the spectral-domain view is obtained for each building block of the digital front-end circuitry. The proposed digital front-end circuitry is simulated, designed, and both synthesized in a 180 nm CMOS application-specific integrated circuit technology and implemented in the Xilinx XC6VLX550T field-programmable gate array (Xilinx, San Jose, CA, USA).

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Characterization of Ultra-Thin Diamond-Like Carbon Films by SEM/EDX

Coatings ◽

10.3390/coatings11060729 ◽

2021 ◽

Vol 11 (6) ◽

pp. 729

Author(s):

Chanida Puttichaem ◽

Guilherme P. Souza ◽

Kurt C. Ruthe ◽

Kittipong Chainok

Keyword(s):

Regression Models ◽

Hard Disk Drives ◽

Carbon Films ◽

Diamond Like Carbon ◽

Disk Drives ◽

Cross Sectional ◽

Protective Films ◽

High Throughput Method ◽

Multiple Regression Models

A novel, high throughput method to characterize the chemistry of ultra-thin diamond-like carbon films is discussed. The method uses surface sensitive SEM/EDX to provide substrate-specific, semi-quantitative silicon nitride/DLC stack composition of protective films extensively used in the hard disk drives industry and at Angstrom-level. SEM/EDX output is correlated to TEM to provide direct, gauge-capable film thickness information using multiple regression models that make predictions based on film constituents. The best model uses the N/Si ratio in the films, instead of separate Si and N contributions. Topography of substrate/film after undergoing wear is correlatively and compositionally described based on chemical changes detected via the SEM/EDX method without the need for tedious cross-sectional workflows. Wear track regions of the substrate have a film depleted of carbon, as well as Si and N in the most severe cases, also revealing iron oxide formation. Analysis of film composition variations around industry-level thicknesses reveals a complex interplay between oxygen, silicon and nitrogen, which has been reflected mathematically in the regression models, as well as used to provide valuable insights into the as-deposited physics of the film.

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