MEMS Post-Packaging by Localized Heating

Abstract This work addresses important post-packaging issues for microelectromechanical systems (MEMS) and introduces specific research directions by means of localized heating and bonding. MEMS packaging has become a major research subject due to the stringent packaging requirements in the emerging filed of MEMS. Establishing a versatile post-packaging process not only advances the field scientifically but also helps product commercialization in industry. An innovative post-packaging approach by localized heating and bonding is proposed and presented in this paper. Various post-packaging processes are demonstrated, including an integrated LPCVD (Low Pressure Chemical Vapor Deposition) sealing process, localized silicon-gold eutectic bonding, localized silicon-glass fusion bonding, localized solder bonding and localized CVD bonding processes.

Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20020079 ◽

2002 ◽

Vol 12 (4) ◽

pp. 69-74 ◽

Cited By ~ 2

Author(s):

A. Levesque ◽

A. Bouteville ◽

H. de Baynast ◽

B. Laveissière

Keyword(s):

Vapor Deposition ◽

Corrosion Behaviour ◽

Chemical Vapor ◽

Low Pressure ◽

Electrochemical Polarization ◽

ANALYSIS OF HEAT AND MASS TRANSFER DURING MULTI-WAFER LOW PRESSURE CHEMICAL VAPOR DEPOSITION PROCESS

Proceeding of International Heat Transfer Conference 11 ◽

10.1615/ihtc11.240 ◽

1998 ◽

Author(s):

K.S. Park ◽

M. Choi

Keyword(s):

Mass Transfer ◽

Heat And Mass Transfer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Chemical Vapor Deposition Process ◽

Pressure Chemical ◽

Vapor Deposition Process

Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

10.21236/ada146416 ◽

1984 ◽

Author(s):

R. H. Vogel ◽

S. R. Butler ◽

F. J. Feigl

Keyword(s):

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Atmospheric pressure chemical vapor deposition of blanket tungsten films on silicon substrates for integrated circuit applications

Journal of Electronic Materials ◽

10.1007/bf02659737 ◽

1995 ◽

Vol 24 (6) ◽

pp. 761-766 ◽

Cited By ~ 4

Author(s):

M. S. Haque ◽

U. V. Patel ◽

H. A. Naseem ◽

W. D. Brown

Keyword(s):

Integrated Circuit ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Silicon Substrates ◽

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300543 ◽

2020 ◽

Author(s):

Meric Firat ◽

Hariharsudan Sivaramakrishnan Radhakrishnan ◽

Maria Recaman Payo ◽

Filip Duerinckx ◽

Rajiv Sharma ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Phosphorus Doped

Influence of Si doping on the microstructure and hardness of an AlTiSiN coating deposited by low pressure chemical vapor deposition

Ceramics International ◽

10.1016/j.ceramint.2021.05.285 ◽

2021 ◽

Author(s):

Liyong Chen ◽

Lianchang Qiu ◽

Jifei Zhu ◽

Lunwang Yang ◽

Wei Cheng ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Si Doping ◽

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

Advanced Engineering Materials ◽

10.1002/adem.201700193 ◽

2017 ◽

Vol 19 (8) ◽

pp. 1700193 ◽

Cited By ~ 2

Author(s):

Mattias Vervaele ◽

Bert De Roo ◽

Jolien Debehets ◽

Marilyne Sousa ◽

Luman Zhang ◽

...

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Liquid Injection ◽

Pressure Chemical ◽

Direct Liquid Injection

Temperature Dependence of β-Ga2O3 Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.160799 ◽

2021 ◽

pp. 160799

Author(s):

Gavax Joshi ◽

Yogesh Singh Chauhan ◽

Amit Verma

Keyword(s):

Temperature Dependence ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

Chemistry of Materials ◽

10.1021/cm00036a007 ◽

1993 ◽

Vol 5 (12) ◽

pp. 1710-1714 ◽

Cited By ~ 12

Author(s):

R. A. Levy ◽

J. M. Grow ◽

G. S. Chakravarthy

Keyword(s):

Silicon Dioxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

Nanoscale Research Letters ◽

10.1186/s11671-020-03439-1 ◽

2020 ◽

Vol 15 (1) ◽

Author(s):

Tao Han ◽

Hongxia Liu ◽

Shulong Wang ◽

Shupeng Chen ◽

Kun Yang

Keyword(s):

Vapor Deposition ◽

Spectral Characteristics ◽

Graphene Film ◽

Chemical Vapor ◽

Chemical Vapor Deposition Method ◽

Si Substrate ◽

Broadband Absorption ◽

Gate Effect ◽

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.