Effect of the Organic Acid Surface Modification on Bond Strength of Tin and Copper

2011 ◽  
Author(s):  
Shinji Koyama ◽  
Yukinari Aoki ◽  
Ikuo Shohji
Keyword(s):  
Surface Modification ◽  
Citric Acid ◽  
Solid State ◽  
Bond Strength ◽  
Organic Acid ◽  
Vacuum Chamber ◽  
Bonding Temperature ◽  
Bonded Joints ◽  
Bonding Pressure ◽  
Bonded Interface

The effect of citric-acid surface modification on the bond strength of the solid-state bonded interface of tin and copper has been investigated by SEM observation of the interfacial microstructures and fractured surfaces. Citric-acid surface modification was carried out in a vacuum chamber at a bonding temperature of 383–473 K and a bonding pressure of 7 MPa (bonding time: 1800 s). The citric-acid surface modification decreased bonding temperature by 70 K at which bonded joints could be obtained and bond strength comparable with the base metal was achieved.

Cu/Cu Direct Bonding by Metal Salt Generation Bonding Technique with Formic Acid and Citric Acid

2014 ◽  
Vol 922 ◽  
pp. 219-223 ◽  
Author(s):  
Naoki Hagiwara ◽  
Shinji Koyama ◽  
Ikuo Shohji
Keyword(s):  
Surface Modification ◽  
Citric Acid ◽  
Solid State ◽  
Formic Acid ◽  
Metal Salt ◽  
Bonding Temperature ◽  
Maximum Load ◽  
Bonded Joints ◽  
Copper Surfaces ◽  
Modified Surfaces

The effect of formic acid and citric acid surface modification on the bonded strength of the solid-state direct bonded interface of copper was investigated by SEM observations of interfacial microstructures and fractured surfaces. Copper surfaces were modified by boiling in 98% formic acid for 0.6 ks and 17% aqueous solution of citric acid for 0.96 s. Solid-state bonding was performed in a vacuum chamber at bonding temperature of 423 ~ 673 K under a pressure of 588 N (bonding time of 0.9 ks). As a result of surface modification by formic acid and citric acid, bonded joints were obtained at a bonding temperature 150 K (formic acid) and 100 K (citric acid) lower than that required for non-modified surfaces, and the bond strength was comparable to that of the maximum load.

scholarly journals Effect of Surface Modification by Aqueous NaOH Solution on Bond Strength of Solid-State Bonded Interface of Al

2013 ◽  
Vol 54 (10) ◽  
pp. 1975-1980 ◽  
Author(s):  
Shinji Koyama ◽  
Ting Seng Keat ◽  
Shun Amari ◽  
Kouta Matsubara ◽  
Ikuo Shohji
Keyword(s):  
Surface Modification ◽  
Solid State ◽  
Bond Strength ◽  
Bonded Interface ◽  
Naoh Solution ◽  
Effect Of Surface

Uniqueness and Challenges of Sintered Silver as a Bonded Interface Material†

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000178-000187
Author(s):  
A. A. Wereszczak ◽  
Z. Liang ◽  
M. K. Ferber ◽  
L. D. Marlino
Keyword(s):  
Solid State ◽  
Bond Strength ◽  
New Technology ◽  
State Process ◽  
Bonded Interface ◽  
Temperature Capability ◽  
Thermally Conductive ◽  
Higher Temperature ◽  
Sintered Ag ◽  
Sintered Silver

There are numerous attributes of sintered silver (Ag) as a bonded interface between die and substrate or even between substrate and heat sink in power devices. This is attested to by the relatively large number of studies devoted to it the last several years. Sintered silver potentially has a high temperature capability, high electrical and thermal conductivities, its microstructure is in equilibrium, it could predictably respond linearly elastically during thermal cycling, and the time-dependent pore coalescence and pore growth that exists with solders is apparently minimal or even nonexistent. But sintered silver bonding is a relatively new technology and solid-state sintering science and its application can be unfamiliar to solder/bonding practitioners. There are at least five different aspects of it compared to solder bonding and those are overviewed here based on the authors' experience with Ag-sintering over the last several years. For sintered-Ag interconnect bonding: it is a solid-state process (i.e., no melting); its bond strength is affected by the topography of the mating surfaces; concurrent pressure application during processing can improve bond strength; issues associated with the paste's organic binder burnout and exhaust can arise depending on the interconnect size; and porosity is indigenous to its bulk microstructure requiring its consideration and possible management. Increased understanding of these unique characteristics will help advance employment of sintered-Ag technology and the exploitation of its attributes for fabricating more reliable, higher-temperature- capable, and more thermally conductive power electronic modules.

Solid State Bonding of Al Alloy/SUS304 by Metal Salt Generation Bonding Technique with Acetic Acid

2014 ◽  
Vol 922 ◽  
pp. 491-496 ◽  
Author(s):  
Kota Matsubara ◽  
Shinji Koyama ◽  
Hideo Nagata ◽  
Yoshiyuki Suda ◽  
Ikuo Shohji
Keyword(s):  
Acetic Acid ◽  
Surface Modification ◽  
Metal Salt ◽  
Bonding Temperature ◽  
Maximum Load ◽  
Al Alloy ◽  
Bonded Joints ◽  
Modified Surfaces ◽  
Aluminum Surfaces ◽  
Effect Of Surface

The effect of surface modification on the tensile strength of the bonded interface of Al alloy and SUS304 stainless steel was investigated by SEM observations of interfacial microstructures and fractured surfaces. Aluminum surfaces were modified by boiling in 5% aqueous solution of NaOH for 20 s and 99.7% Acetic acid for 60 s. Bonding was performed at bonding temperature of 753 ~ 813 K under a pressure of 6 MPa (bonding time of 1.8 ks). As a result of surface modification, bonded joints were obtained at a bonding temperature 20 K lower than that required for non-modified surfaces, and the bonded strength was comparable to that of the maximum load.

Uniqueness and Challenges of Sintered Silver as a Bonded Interface Material

2014 ◽  
Vol 11 (4) ◽  
pp. 158-165 ◽  
Author(s):  
A. A. Wereszczak ◽  
Z. Liang ◽  
M. K. Ferber ◽  
L. D. Marlino
Keyword(s):  
Solid State ◽  
Bond Strength ◽  
New Technology ◽  
Elastic Response ◽  
Linear Elastic ◽  
State Process ◽  
Bonded Interface ◽  
Temperature Capability ◽  
Thermally Conductive ◽  
Sintered Ag

There are numerous attributes of sintered Ag as a bonded interface between die and substrate or even between substrate and heat sink in power devices. This is attested to by the relatively large number of studies devoted to it in recent years. Sintered Ag potentially has a high temperature capability, high electrical and thermal conductivities, a microstructure in equilibrium, predictable linear elastic response during thermal cycling, and apparently minimal or even nonexistent time-dependent pore coalescence and pore growth that exists with solders. But sintered Ag bonding is a relatively new technology and solid-state sintering science and its application can be unfamiliar to solder/bonding practitioners. There are at least five different aspects of sintered Ag bonding compared with solder bonding. Those are reviewed here based on the authors' experience with Ag sintering over the last several years. Sintered-Ag interconnect bonding is a solid-state process (i.e., no melting); its bond strength is affected by the topography of the mating surfaces; concurrent pressure application during processing can improve bond strength; issues associated with the paste's organic binder burnout and exhaust can arise depending on the interconnect size; and porosity is indigenous to its bulk microstructure, requiring its consideration and possible management. Increased understanding of these unique characteristics will help advance use of sintered-Ag technology and the exploitation of its attributes for fabricating more reliable, higher-temperature-capable, and more thermally conductive power electronic modules.

Microstructure of SiC/Cu Interface by Pulsed Electric-Current Bonding

2007 ◽  
Vol 539-543 ◽  
pp. 3883-3887 ◽  
Author(s):  
Akio Nishimoto ◽  
Katsuya Akamatsu ◽  
Kenji Ikeuchi
Keyword(s):  
Solid Solution ◽  
Bond Strength ◽  
Electric Current ◽  
Intermediate Layer ◽  
Bonded Joints ◽  
Bonding Pressure ◽  
Intermediate Layers ◽  
Pulsed Electric Current ◽  
Solution Layer ◽  
Sintered Silicon

Pulsed electric-current sintering (PECS) was applied to the bonding of SiC (pressureless-sintered silicon carbide) to Cu (oxygen-free copper) using a mixture of Cu and Ti powders as an intermediate layer. The influences of the intermediate powders on the bond strength of the joint were investigated by observation of the microstructure. The bonding was carried out at carbon-die temperatures from 973 to 1173 K at a bonding pressure of 10 MPa for 3.6 ks. The application of intermediate layers of 100% Ti, 95% Ti + 5% Cu, and 5% Ti + 95% Cu remarkably improved the bond strength as compared with direct bonding without an intermediate powder. SEM observations of the joint with the intermediate powders revealed that a Cu solid-solution layer, a TiC layer, and a Ti5Si3 layer had covered most of the interface, similar to those observed in the friction-bonded and pulsed-electric current bonded joints of SiC to Cu in which the application of a Ti foil as an intermediate layer remarkably improved the bond strength.

Pulsed Electric Current Bonding of Tungsten to Titanium

2014 ◽  
Vol 782 ◽  
pp. 445-448
Author(s):  
Keisuke Kobuchi ◽  
Akio Nishimoto
Keyword(s):  
Bond Strength ◽  
Tensile Test ◽  
Electric Current ◽  
Bonding Temperature ◽  
Bonding Process ◽  
Joint Interface ◽  
Bonding Pressure ◽  
Bonding Condition ◽  
Pulsed Electric Current

Pulsed electric-current sintering was applied to the bonding of tungsten to titanium. The influence of bonding condition on the bond strength of joint was investigated by observing the microstructure. The bonding process was carried out at bonding temperature from 773 to 1273 K for 1.8 ks at a bonding pressure of 40 MPa. The bond strength of the joint bonded at the temperature higher than 1173 K was around 200 MPa. This joint fractured in the tungsten during tensile test. SEM-EDX observation revealed that W diffused into Ti at the joint interface of the joint bonded at the temperature higher than 973 K.

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