A New Prediction Model on the Luminance of OLEDs Subjected to Different Reverse Biases for Alleviating Degradation in AMOLED Displays

Author(s):  
Paul C.-P. Chao ◽  
Yen-Ping Hsu ◽  
Yung-Hua Kao ◽  
Kuei-Yu Lee

Organic light-emitting diodes (OLEDs) have drawn much attention in areas of displays and varied illumination devices due to multiple advantages, such as high brightness, high efficiency, wide viewing angle, and simple structure. However, the long-time degradation of OLED emission is a serious drawback. This degradation was investigated by past works, which pointed out that the degradation was induced by high-density currents through OLED component under the long-time operation [1][2]. Proposed by a past work [3], different reverse biases was imposed on OLED components in display frames to alleviate the long-time degradation on OLEDs. Most recently, along with the reverse bias, new pixel circuits [4][5] for AMOLED displays are designed to alleviate OLED degradation, thus successfully extending OLED life time. However, since emission luminances in different frame times during AMOLED displaying differs significantly for displaying varied images, the OLED degradation evolves in a highly unpredictable fashion. In this study, based on valid theories, the voltage across the OLED is first used as indicator for OLED degradation. Then the relation between the level of OLED degradation, in terms of OLED’s cross voltage, and the history of imposing reverse biases are precisely modeled. With the model, the degradation of the OLED under reverse bias to extend lifetime can be successfully predicted. Based on this model, engineers can then optimize the applied reverse bias on OLEDs to maximize the OLED lifetime for varied display requirement.

2018 ◽  
Vol 6 (40) ◽  
pp. 10793-10803 ◽  
Author(s):  
Shian Ying ◽  
Dezhi Yang ◽  
Xianfeng Qiao ◽  
Yanfeng Dai ◽  
Qian Sun ◽  
...  

High-performance WOLEDs realizing high efficiency and low efficiency roll-off simultaneously were achieved by strategically managing triplet excitons in the emission layer.


MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 318-323 ◽  
Author(s):  
Daniel F. Feezell ◽  
Mathew C. Schmidt ◽  
Steven P. DenBaars ◽  
Shuji Nakamura

AbstractThis article reviews the development of nonpolar and semipolar InGaN/GaN light-emitting diodes (LEDs), emphasizing structures on freestanding bulk GaN. A brief history of LED development on each orientation is provided, followed by a discussion of the most relevant and recent results. The context is related to several current LED issues, such as the realization of high-efficiency white solid-state lighting, potential solutions to the “green gap,” and applications for polarized emitters. The section on nonpolar LEDs highlights high-power violet and blue emitters and considers the effects of indium incorporation and substrate miscut. The section on semipolar GaN reviews the development of LEDs in the violet, blue, green, and yellow regions and highlights the potential of InGaN/GaN LEDs as an alternative technology to AlInGaP for yellow emitters. A brief review of polarization anisotropy also is included for each orientation. Finally, a two source white light system utilizing a nonpolar blue LED and a semipolar yellow LED is presented.


Polymers ◽  
2021 ◽  
Vol 13 (11) ◽  
pp. 1853
Author(s):  
Ruslana Udovytska ◽  
Pavel Chulkin ◽  
Aleksandra Wypych-Puszkarz ◽  
Jaroslaw Jung

The article describes three different ways of polymer light-emitting diode (PLED) degradation, caused by damage of the protective layer. The electroluminescence and charge-transport properties of a completely encapsulated diode, the diodes with a leaky protective layer and diodes without encapsulation were compared under long-time exploitation. The studied devices incorporated Super Yellow light-emitting poly-(1,4-phenylenevinylene) PPV copolymer as an electroluminescence component, and (poly-(3,4-ethylenedioxythiophene)–poly-(styrene sulfonate) (PEDOT:PSS) as a charge-transport layer between the indium tin oxide (ITO) anode and aluminum–calcium cathode. To analyze the PLED degradation mechanism regarding charge transport, impedance spectroscopy was used. The values of resistance and capacitance of the internal layers revealed an effect of applied voltage on charge carrier injection and recombination. The factors responsible for the device degradation were analyzed on a macromolecular level by comparing the plots of voltage dependence of resistance and capacitance at different operation times elapsed.


2002 ◽  
Vol 737 ◽  
Author(s):  
B.R. Jumayev ◽  
H.L. Tam ◽  
K.W. Cheah ◽  
N.E. Korsunska

ABSTRACTIn present report, we investigated the degradation processes in porous silicon light-emitting devices (LED) in different atmospheres (O2, N2, air and vacuum) by photoluminescence (PL), electroluminescence (EL), lifetime (LT) and I-V characteristic measurements as well as by Energy Dispersive X-ray Spectroscopy (EDS). The contacts were made by evaporation of Au and Au/Cu alloy. The LEDs emit in visible range at forward and reverse bias. As a rule, full width at half maximum of EL spectrum is wider than that of PL spectrum. The bias direction of applied voltage during degradation change EL, PL, I-V characteristics, and LT of the LEDs. At forward bias, LT degradation is less than that in reverse bias.The degradation of LEDs during forward bias did not produce any change in the spectral shape of EL and PL. At reverse bias, degradation led to red shift in the peak of EL and PL. The results show that the lifetime of LEDs with Au contact is longer than Au-Cu. Operating in different atmospheres, the LT in vacuum is longest and is more than 100 hours in reverse bias at room temperature.Possible mechanisms of degradation of LEDs are discussed. It is proposed that degradation is connected mainly with two processes: oxidation and metal diffusion. It is shown that the oxygen and metal in ionic state can diffuse quickly. Hence, in forward bias, the diffusion of metal would dominate, and in reverse bias, diffusion of oxygen dominates.


2013 ◽  
Vol 14 (11) ◽  
pp. 2854-2858 ◽  
Author(s):  
Jing Wang ◽  
Jun Liu ◽  
Saijun Huang ◽  
Xinkai Wu ◽  
Xindong Shi ◽  
...  

Author(s):  
Yi Zhao ◽  
Biao Li ◽  
Daryl Ludlow ◽  
Xin Zhang

In micro satellites, delicate instrumentations are compacted into a limited space. It raises concerns of active cooling and remote cooling. Silicon based micro-pump arrays are employed thanks to manufacturing simplicity, a small cryogen charge, etc., which keeps the instrumentations within a narrow cryogenic temperature range. The mechanical performance of the silicon diaphragm, the key component of the micro-pump, is critical in terms of heat balance calculation and life time evaluation. This paper examines the mechanical performance of the silicon diaphragm under cryogenic temperature for micro satellite applications. In this work, differential pressure was used for the actuation of a single-crystal silicon diaphragm. Diaphragm deflection and stress distribution were achieved using interferometry and micro Raman spectroscopy, respectively. As a result, a higher elastic modulus was associated with the diaphragm under cryogenic temperature, comparing to that under room temperature, indicating a stiffer material. From stress mapping, the edge centers were believed to be the most vulnerable to fracture, which was further validated by analyzing the fracture diaphragm. Moreover, a fatigue testing was conducted for 1.8 million cycles with no damage found, verifying thin film silicon as a viable material for long time operation in a cryogenic environment.


2011 ◽  
Vol 23 (20) ◽  
pp. 2353-2356 ◽  
Author(s):  
Ebinazar B. Namdas ◽  
Ben B.Y. Hsu ◽  
Jonathan D. Yuen ◽  
Ifor D. W. Samuel ◽  
Alan J. Heeger

2019 ◽  
Vol 33 (4) ◽  
pp. 613-624 ◽  
Author(s):  
Andreas E. Plößl ◽  
Johannes Baur ◽  
Dieter Eißler ◽  
Karl Engl ◽  
Volker Härle ◽  
...  

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