Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models

2001 ◽  
Vol 19 (2) ◽  
pp. 524-538 ◽  
Author(s):  
Da Zhang ◽  
Mark J. Kushner
Keyword(s):  
Plasma Etching ◽  
Surface Reactions ◽  
Scale Models ◽  
Feature Scale

Integrating system and feature scale models to study copper reflow

1999 ◽  
Vol 17 (1) ◽  
pp. 186 ◽  
Author(s):  
L. J. Friedrich ◽  
S. K. Dew ◽  
M. J. Brett ◽  
T. Smy
Keyword(s):  
Scale Models ◽  
Feature Scale

Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si

2021 ◽  
Author(s):  
Luiz Felipe Aguinsky ◽  
Georg Wachter ◽  
Francio Rodrigues ◽  
Alexander Scharinger ◽  
Alexander Toifl ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Scale Modeling ◽  
Feature Scale

A 3D Soft-EHL Model for Simulating Feature-scale Defects in Advanced Node ICs

2013 ◽  
Vol 1560 ◽  
Author(s):  
Jonatan A. Sierra-Suarez ◽  
Gagan Srivastava ◽  
C. Fred Higgs
Keyword(s):  
Wafer Scale ◽  
Scale Models ◽  
Simulation Results ◽  
Feature Scale

ABSTRACTA new multiphysics, multiscale framework is presented which is capable of capturing and predicting both wafer-scale and feature-scale defects. Through physics-based modeling, the empirical wear/Preston coefficient often found in popular feature scale models has been eliminated. Simulation results show the topography evolution of an actual metal 1 layout between two dies located in different positions on a wafer during the CMP process.

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

2014 ◽  
Vol 28 (18) ◽  
pp. 1450149 ◽  
Author(s):  
Jie Ge ◽  
Yi Yang ◽  
Xiao-Ning Li ◽  
Tianling Ren
Keyword(s):  
Plasma Etching ◽  
Diblock Copolymer ◽  
Inductively Coupled Plasma ◽  
Random Access ◽  
Flux Ratio ◽  
Critical Dimension ◽  
Scale Model ◽  
Access Memory ◽  
Inductively Coupled ◽  
Feature Scale

To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF 3/ H 2 mixture is used for effective etching of SiO 2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO 2, diblock copolymer and Pt . Etch properties of SiO 2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO 2 layer to Pt layer was discussed.

Influence of hydrogen in silicon nitride films on the surface reactions during hydrofluorocarbon plasma etching

2017 ◽  
Vol 35 (6) ◽  
pp. 061306 ◽  
Author(s):  
Nobuyuki Kuboi ◽  
Tetsuya Tatsumi ◽  
Hideki Minari ◽  
Masanaga Fukasawa ◽  
Yoshifumi Zaizen ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Etching ◽  
Surface Reactions ◽  
Silicon Nitride Films

STEP COVERAGE PREDICTIONS USING COMBINED REACTOR SCALE AND FEATURE SCALE MODELS FOR BLANKET TUNGSTEN LPCVD

1993 ◽  
Vol 119 (1) ◽  
pp. 197-220 ◽  
Author(s):  
T.S. CALE ◽  
J.-H. PARK ◽  
T.H. GANDY ◽  
G.B. RAUPP ◽  
M.K. JAIN
Keyword(s):  
Step Coverage ◽  
Scale Models ◽  
Feature Scale
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