Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si

2021 ◽  
Author(s):  
Luiz Felipe Aguinsky ◽  
Georg Wachter ◽  
Francio Rodrigues ◽  
Alexander Scharinger ◽  
Alexander Toifl ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Scale Modeling ◽  
Feature Scale

Mechanisms for plasma etching of RRAM SiO2 with diblock copolymer selectivity

2014 ◽  
Vol 28 (18) ◽  
pp. 1450149 ◽  
Author(s):  
Jie Ge ◽  
Yi Yang ◽  
Xiao-Ning Li ◽  
Tianling Ren
Keyword(s):  
Plasma Etching ◽  
Diblock Copolymer ◽  
Inductively Coupled Plasma ◽  
Random Access ◽  
Flux Ratio ◽  
Critical Dimension ◽  
Scale Model ◽  
Access Memory ◽  
Inductively Coupled ◽  
Feature Scale

To minimize the critical dimension of resistive switching random access memory (RRAM), good anisotropy and selectivity with diblock copolymer are required for silicon dioxide etching. Inductively coupled plasma (ICP) etcher using CHF 3/ H 2 mixture is used for effective etching of SiO 2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO 2, diblock copolymer and Pt . Etch properties of SiO 2 at different chamber conditions were discussed. It was found that etch rate increased at the expense of selectivity as ICP power increased, which was the opposite trend for pressure. Selectivity and anisotropy are achieved at neutral to ion flux ratio 100:1. Moreover, the appropriate overetch time for SiO 2 layer to Pt layer was discussed.

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