Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Oxide Semiconductor ◽

Soft Breakdown

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Applied Physics Letters ◽

10.1063/1.1420586 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3488-3490 ◽

Cited By ~ 7

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Gate Dielectrics ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Soft Breakdown

Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581818 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1340-1351 ◽

Cited By ~ 15

Author(s):

G. Lucovsky

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Silicon Nitride Films ◽

Dielectric Interfaces ◽

Reaction Annealing

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

High Permittivity

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Oxide Semiconductor ◽

Light Emitting

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Soft Error ◽

Oxide Semiconductor ◽

Memory Design

Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Far Infrared ◽

Oxide Semiconductor ◽

Electronic Detection ◽

Far Infrared Radiation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Empirical implantation damage model and its effect on reverse short channel effect for 0.35 μm complementary metal–oxide–semiconductor technology

10.1116/1.589934 ◽

1998 ◽

Vol 16 (1) ◽

pp. 430

Author(s):

Jongmin Kim

Keyword(s):

Metal Oxide ◽

Damage Model ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Implantation Damage ◽

Channel Effect

Bit Swapping Linear Feedback Shift Register for Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology

International Journal of Engineering ◽

10.5829/idosi.ije.2017.30.08b.03 ◽

2017 ◽

Keyword(s):

Metal Oxide ◽

Low Power ◽

Shift Register ◽

Oxide Semiconductor ◽

Linear Feedback ◽

Feedback Shift Register ◽

Power Application

Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

Journal of Electronic Imaging ◽

10.1117/1.1762886 ◽

2004 ◽

Vol 13 (3) ◽

pp. 559 ◽

Cited By ~ 4

Author(s):

Olivier Aubreton

Keyword(s):

Metal Oxide ◽

Pattern Matching ◽

Oxide Semiconductor ◽

Semiconductor Technology