Characterization of advanced complementary metal–oxide–semiconductor processes with reverse secondary ion mass spectrometry profiling

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1596214 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1487 ◽

Author(s):

Z. X. Jiang ◽

J. Lerma ◽

J. J. Lee ◽

D. Sieloff ◽

S. Chen ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Secondary Ion Mass Spectrometry ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ion Mass Spectrometry ◽

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Profiling of ultra-shallow complementary metal–oxide semiconductor junctions using spreading resistance: A comparison to secondary ion mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586387 ◽

1992 ◽

Vol 10 (1) ◽

pp. 533 ◽

Author(s):

C. M. Osburn

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Secondary Ion Mass Spectrometry ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spreading Resistance ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

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Quantitative secondary ion mass spectrometry dopant profiling in silicided metal–oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.577633 ◽

1991 ◽

Vol 9 (3) ◽

pp. 1390-1394 ◽

Author(s):

Howard E. Smith ◽

John L. Beagle

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dopant Profiling ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal–oxide–semiconductor transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581298 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1762-1766 ◽

Author(s):

Jinju Lee ◽

Shian Aur ◽

Robert Eklund ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Mass Spectroscopy ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Sintering Process ◽

Secondary Ion Mass Spectroscopy ◽

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Detection of Au+ Ions During Fluorine Gas-Assisted Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) for the Complete Elemental Characterization of Microbatteries

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c10352 ◽

2021 ◽

Vol 13 (34) ◽

pp. 41262-41274

Author(s):

Agnieszka Priebe ◽

Jordi Sastre ◽

Moritz H. Futscher ◽

Jakub Jurczyk ◽

Marcos V. Puydinger dos Santos ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Elemental Characterization

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Forensic Characterization of Lipsticks Using Time-of-Flight Secondary Ion Mass Spectrometry

Journal of Analytical Chemistry ◽

10.1134/s1061934821070091 ◽

2021 ◽

Vol 76 (7) ◽

pp. 854-867

Author(s):

Jihye Lee ◽

Yeonhee Lee

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Ion Mass Spectrometry ◽

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Secondary ion mass spectrometry (SIMS) applications on characterization of RF NPN bipolar polysilicon emitter process

10.1063/1.52570 ◽

1997 ◽

Author(s):

S. Lu

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

Polysilicon Emitter ◽

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Characterization of sequentially grafted polysaccharide coatings using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and principal component analysis (PCA)

Surface and Interface Analysis ◽

10.1002/sia.1446 ◽

2002 ◽

Vol 33 (12) ◽

pp. 924-931 ◽

Author(s):

Sally L. McArthur ◽

Matthew S. Wagner ◽

Patrick G. Hartley ◽

Keith M. McLean ◽

Hans J. Griesser ◽

...

Keyword(s):

Mass Spectrometry ◽

Principal Component Analysis ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Principal Component ◽

Component Analysis ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

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Characterization of S-glass/polysulfone adhesive failure using ion scattering spectroscopy and secondary ion mass spectrometry

Journal of Colloid and Interface Science ◽

10.1016/0021-9797(80)90178-2 ◽

1980 ◽

Vol 74 (1) ◽

pp. 150-162 ◽

Author(s):

Anthony T Dibenedetto ◽

Daniel A Scola

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Adhesive Failure ◽

Ion Scattering ◽

Ion Scattering Spectroscopy ◽

Ion Mass Spectrometry ◽

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