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Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis
Applied Physics Letters
◽
10.1063/1.3148830
◽
2009
◽
Vol 94
(22)
◽
pp. 223512
◽
Cited By ~ 59
Author(s):
P. Kordoš
◽
R. Stoklas
◽
D. Gregušová
◽
J. Novák
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Frequency Dependent
Download Full-text
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References
Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors
Chinese Physics Letters
◽
10.1088/0256-307x/32/12/127101
◽
2015
◽
Vol 32
(12)
◽
pp. 127101
◽
Cited By ~ 1
Author(s):
Hua-Jun Shen
◽
Ya-Chao Tang
◽
Zhao-Yang Peng
◽
Xiao-Chuan Deng
◽
Yun Bai
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Fabrication And Characterization
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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.1640659
◽
2004
◽
Vol 22
(1)
◽
pp. 327
◽
Cited By ~ 4
Author(s):
Erika Duda
◽
Shifeng Lu
◽
Chun-Li Liu
◽
Zhixiong Jiang
◽
Joe Lerma
◽
...
Keyword(s):
Mass Spectrometry
◽
Metal Oxide
◽
Field Effect
◽
Secondary Ion Mass Spectrometry
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Strained Silicon
◽
Secondary Ion
Download Full-text
High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.1849424
◽
2005
◽
Vol 97
(4)
◽
pp. 046106
◽
Cited By ~ 4
Author(s):
Stephen K. Powell
◽
Neil Goldsman
◽
Aivars Lelis
◽
James M. McGarrity
◽
Flynn B. McLean
Keyword(s):
Silicon Carbide
◽
High Temperature
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Temperature Modeling
Download Full-text
Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors
IEEE Transactions on Electron Devices
◽
10.1109/ted.2021.3130016
◽
2021
◽
pp. 1-7
Author(s):
Zhihao Chen
◽
Xinxin Yu
◽
Jianjun Zhou
◽
Shuman Mao
◽
Yuechan Kong
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
Download Full-text
Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
◽
10.1109/edtm47692.2020.9117824
◽
2020
◽
Author(s):
T. Maeda
◽
H. Ishii
◽
W. H. Chang
◽
H. Kanaya
◽
T. Asano
Keyword(s):
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Thz Wave
◽
Wave Detection
Download Full-text
Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.4712564
◽
2012
◽
Vol 100
(19)
◽
pp. 192101
◽
Cited By ~ 9
Author(s):
D. R. Gajula
◽
D. W. McNeill
◽
B. E. Coss
◽
H. Dong
◽
S. Jandhyala
◽
...
Keyword(s):
Low Temperature
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Fabrication And Characterization
Download Full-text
GHz Range Frequency Characterization of Moderately Inverted Sub-100 nm Gate Underlap Silicon-on-Insulator-Metal-Oxide-Semiconductor Field Effect Transistors
Journal of Nanoelectronics and Optoelectronics
◽
10.1166/jno.2016.1921
◽
2016
◽
Vol 11
(4)
◽
pp. 514-522
Author(s):
Indra Vijay Singh
◽
M. S. Alam
◽
G. A. Armstrong
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Silicon On Insulator
◽
Oxide Semiconductor
◽
Gate Underlap
Download Full-text
Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
Japanese Journal of Applied Physics
◽
10.7567/jjap.52.04cc24
◽
2013
◽
Vol 52
(4S)
◽
pp. 04CC24
◽
Cited By ~ 2
Author(s):
Bo-Chin Wang
◽
San-Lein Wu
◽
Yu-Ying Lu
◽
Chien-Wei Huang
◽
Chung-Yi Wu
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Uniaxial Tensile
◽
Random Telegraph Noise
◽
Tensile Stresses
◽
Telegraph Noise
Download Full-text
Characterization of Oxide Tarps in 28 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.02bc11
◽
2012
◽
Vol 51
(2S)
◽
pp. 02BC11
◽
Cited By ~ 2
Author(s):
Bo Chin Wang
◽
San Lein Wu
◽
Chien Wei Huang
◽
Yu Ying Lu
◽
Shoou Jinn Chang
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Random Telegraph Noise
◽
Telegraph Noise
◽
P Type
◽
28 Nm
Download Full-text
Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors
Chinese Physics B
◽
10.1088/1674-1056/25/3/037306
◽
2016
◽
Vol 25
(3)
◽
pp. 037306
Author(s):
Qing-Wen Song
◽
Xiao-Yan Tang
◽
Yan-Jing He
◽
Guan-Nan Tang
◽
Yue-Hu Wang
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Fabrication And Characterization
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