Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone

2004 ◽  
Vol 22 (4) ◽  
pp. 1175-1181 ◽  
Author(s):  
Yoshihide Senzaki ◽  
Seung Park ◽  
Hood Chatham ◽  
Lawrence Bartholomew ◽  
Wesley Nieveen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Hafnium Silicate ◽  
Liquid Precursors ◽  
Layer Deposition

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

2003 ◽  
Vol 765 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Rate ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Probe Measurements

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors

2007 ◽  
Vol 22 (7) ◽  
pp. 1899-1906 ◽  
Author(s):  
Yan-Kai Chiou ◽  
Che-Hao Chang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Charge Density ◽  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Breakdown Field ◽  
Layer Deposition

The growth of HfO2 thin films on a HF-dipped p-Si(100) substrate at 200 °C by atomic-layer deposition (ALD) using Hf[N(C2H5)(CH3)]4 and H2O vapor as precursors is demonstrated. Uniform HfO2 thin films are obtained on a 4-in. silicon wafer, and the energy-band gap and band offset are determined by x-ray photoelectron spectroscopy analysis. The as-deposited HfO2 thin film is amorphous and able to crystallize at 500 ∼ 600 °C with only the monoclinic phase. As for the electrical performance of Au–Ti–HfO2–Si metal oxide semiconductor capacitors, a dielectric constant of ∼17.8 and an equivalent oxide thickness value of ∼1.39 nm are obtained from the 40-cycle ALD film after annealing at 500 °C. In addition, the breakdown field is in the range of 5 ∼ 5.5 MV/cm, and the fixed charge density is on the order of 1012 cm−2, depending on the annealing temperatures. The interface quality of HfO2 thin films on silicon is satisfactory with an interface-trap charge density of ∼3.7 × 1011 cm−2 eV−1.

Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

2019 ◽  
Vol 58 (SD) ◽  
pp. SDDE07 ◽  
Author(s):  
Jun-Dao Luo ◽  
He-Xin Zhang ◽  
Zheng-Ying Wang ◽  
Siang-Sheng Gu ◽  
Yun-Tien Yeh ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Ferroelectric Properties ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition
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