Molecular beam epitaxy growth and characterization of mid-IR type-II “W” diode lasers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1861933 ◽

2005 ◽

Vol 23 (3) ◽

pp. 1119 ◽

Author(s):

C. L. Canedy ◽

W. W. Bewley ◽

G. I. Boishin ◽

C. S. Kim ◽

I. Vurgaftman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Diode Lasers ◽

Molecular Beam Epitaxy Growth ◽

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

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Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276429 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3G13-C3G18 ◽

Author(s):

E. Plis ◽

A. Khoshakhlagh ◽

S. Myers ◽

H. S. Kim ◽

N. Gautam ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Infrared Detection ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Strained Layer ◽

Long Wave ◽

Strained Layer Superlattices ◽

Long Wave Infrared

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Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106099 ◽

2021 ◽

Vol 135 ◽

pp. 106099

Author(s):

Qihua Zhang ◽

Xue Yin ◽

Eli Martel ◽

Songrui Zhao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Si Substrate ◽

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1 1 1)B

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.02.006 ◽

2019 ◽

Vol 512 ◽

pp. 164-168

Author(s):

Tobias Henksmeier ◽

Stepan Shvarkov ◽

Alexander Trapp ◽

Dirk Reuter

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Electrical Characterization ◽

Molecular Beam Epitaxy Growth ◽

Temperature Dependent ◽

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Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/010 ◽

1992 ◽

Vol 7 (3) ◽

pp. 337-343 ◽

Author(s):

J R Soderstrom ◽

M M Cumming ◽

J -Y Yao ◽

T G Andersson

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Gaas Substrates

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Molecular beam epitaxy growth and physical characterization of precise, narrow, triangular heterostructures using an analog grading algorithm

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585649 ◽

1991 ◽

Vol 9 (6) ◽

pp. 2805 ◽

Author(s):

Stephen Giugni

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Physical Characterization ◽

Molecular Beam Epitaxy Growth

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Molecular beam epitaxy growth and characterization of ZnTe:Cr[sup 2+] layers on GaAs(100)

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1383075 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1483 ◽

Author(s):

Yu. G. Sadofyev ◽

V. F. Pevtsov ◽

E. M. Dianov ◽

P. A. Trubenko ◽

M. V. Korshkov

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth

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