Synchrotron radiation induced Si–H dissociation on H–Si(111)–1×1 surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system

For in-situ measurements of the local electrical conductivity of well-defined crystal surfaces in ultrahigh vacuum, we have developed two kinds of microscopic four-point probe methods. One involves a "four-tip STM prober," in which four independently driven tips of a scanning tunneling microscope (STM) are used for measurements of four-point probe conductivity. The probe spacing can be changed from 500 nm to 1 mm. The other method involves monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several μm. These probes are installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions are observed in situ. The probes can be positioned precisely on aimed areas on the sample with the aid of piezoactuators. By the use of these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with the macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and the influence of atomic steps on conductivity can be directly measured.

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Direct Observation of X-ray Induced Atomic Motion Using Scanning Tunneling Microscope Combined with Synchrotron Radiation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2011.3916 ◽

2011 ◽

Vol 11 (4) ◽

pp. 2873-2881 ◽

Cited By ~ 4

Author(s):

Akira Saito ◽

Takehiro Tanaka ◽

Yasumasa Takagi ◽

Hiromasa Hosokawa ◽

Hiroshi Notsu ◽

...

Keyword(s):

Synchrotron Radiation ◽

Direct Observation ◽

Scanning Tunneling Microscope ◽

Atomic Motion ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

X Ray

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Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

Review of Scientific Instruments ◽

10.1063/1.4931761 ◽

2015 ◽

Vol 86 (9) ◽

pp. 093707 ◽

Cited By ~ 12

Author(s):

Jungdae Kim ◽

Hyoungdo Nam ◽

Shengyong Qin ◽

Sang-ui Kim ◽

Allan Schroeder ◽

...

Keyword(s):

Low Temperature ◽

Sample Preparation ◽

Scanning Tunneling Microscope ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

Temperature Scanning

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In situ observation of oxygen-induced anisotropic surface etching processes at 6H-SiC(0 0 0 1) by variable temperature scanning tunneling microscope

Applied Surface Science ◽

10.1016/s0169-4332(03)00401-x ◽

2003 ◽

Vol 212-213 ◽

pp. 575-578

Author(s):

H. Okado ◽

O. Kubo ◽

N. Yamaoka ◽

S. Itou ◽

M. Katayama ◽

...

Keyword(s):

Scanning Tunneling Microscope ◽

Variable Temperature ◽

Scanning Tunneling ◽

In Situ Observation ◽

Tunneling Microscope ◽

Surface Etching ◽

Anisotropic Surface ◽

Temperature Scanning

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Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.8.238 ◽

2017 ◽

Vol 8 ◽

pp. 2389-2395 ◽

Cited By ~ 6

Author(s):

Sumit Tewari ◽

Koen M Bastiaans ◽

Milan P Allan ◽

Jan M van Ruitenbeek

Keyword(s):

Atomic Structure ◽

Scanning Tunneling Microscope ◽

Critical Role ◽

Atomic Layer ◽

Atomic Scale ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

Stm Tips

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, procedures for controlling the atomic-scale shape of STM tips have not been rigorously justified. Here, we present a method for preparing tips in situ while ensuring the crystalline structure and a reproducibly prepared tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.

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