Low-resistivity atomic-layer-deposited-TaN with atomic-layer-deposited-TaN/physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect

2006 ◽  
Vol 24 (1) ◽  
pp. 103-105 ◽  
Author(s):  
Akira Furuya ◽  
Nobuyuki Ohtsuka ◽  
Naofumi Ohashi ◽  
Seiichi Kondo ◽  
Shinichi Ogawa
Keyword(s):  
Multilayer Structure ◽  
Atomic Layer ◽  
Low Resistivity

A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures

2018 ◽  
Vol 18 (12) ◽  
pp. 8333-8336 ◽  
Author(s):  
Guangde Wang ◽  
Xinyu Zhang ◽  
Wenlong Jiang ◽  
Lizhong Wang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Visible Region ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Low Resistivity ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Layer Deposition ◽  
Doping Ratio

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

scholarly journals Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics

2020 ◽  
Vol 12 (36) ◽  
pp. 40443-40452
Author(s):  
M. C. Giordano ◽  
K. Baumgaertl ◽  
S. Escobar Steinvall ◽  
J. Gay ◽  
M. Vuichard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Magnetization Dynamics ◽  
Low Resistivity ◽  
Layer Deposition

Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

2006 ◽  
Vol 45 (4B) ◽  
pp. 2975-2979 ◽  
Author(s):  
Kwan-Woo Do ◽  
Chung-Mo Yang ◽  
Ik-Su Kang ◽  
Kyung-Min Kim ◽  
Kyoung-Hum Back ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Temperature Stability ◽  
Atomic Layer ◽  
Nickel Silicide ◽  
High Temperature Stability ◽  
Low Resistivity

Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

2017 ◽  
Vol 29 (15) ◽  
pp. 6502-6510 ◽  
Author(s):  
Katja Väyrynen ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Daniel Peeters ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tertiary Butyl ◽  
Low Resistivity ◽  
Layer Deposition

FLEXIBLE ORGANIC/INORGANIC MOISTURE BARRIER USING PLASMA-POLYMERIZED LAYER

NANO ◽  
2013 ◽  
Vol 08 (04) ◽  
pp. 1350041 ◽  
Author(s):  
SEUNG-WOO SEO ◽  
HO KYOON CHUNG ◽  
HEEYEOP CHAE ◽  
SANG JOON SEO ◽  
SUNG MIN CHO
Keyword(s):  
Multilayer Structure ◽  
Plasma Polymerization ◽  
Atomic Layer ◽  
Barrier Structure ◽  
Moisture Barrier ◽  
Organic Layers ◽  
Layer Deposition ◽  
Barrier Performance ◽  
Bending Radius ◽  
Multilayer Barrier

We report a multilayer moisture barrier structure comprised of alternating inorganic aluminum oxide and plasma-polymerized organic layers. The inorganic and organic layers were grown by atomic layer deposition (ALD) and plasma polymerization in vacuum, respectively. The inclusion of plasma-polymerized layers in the multilayer barrier structure enhanced the moisture barrier performance by around 15% for as-deposited samples. After being subjected to 10 000 bending cycles with a bending radius of 2 cm, however, the moisture barrier performance of the multilayer structure was improved by 50% from that of pure inorganic counterpart.

Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

2018 ◽  
Vol 36 (5) ◽  
pp. 051505 ◽  
Author(s):  
Igor Krylov ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Xianbin Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Low Resistivity ◽  
Layer Deposition
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