Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant

2017 ◽  
Vol 17 (3) ◽  
pp. 333-338 ◽  
Author(s):  
Il-Kwon Oh ◽  
Hyungjun Kim ◽  
Han-Bo-Ram Lee
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

2012 ◽  
Vol 329 ◽  
pp. 159-164 ◽  
Author(s):  
Rosniza Hussin ◽  
Xiang Hui Hou ◽  
Kwang Leong Choy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Semiconductor Industry ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

scholarly journals Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

2021 ◽  
Vol 9 (12) ◽  
pp. 4307-4315
Author(s):  
Tai Nguyen ◽  
Nathalie Valle ◽  
Jérôme Guillot ◽  
Jérôme Bour ◽  
Noureddine Adjeroud ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Growth Process ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition ◽  
Oxygen Gas

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.

Growth of TiO2 Thin Films by Atomic Layer Deposition (ALD)

2016 ◽  
Vol 1133 ◽  
pp. 352-356 ◽  
Author(s):  
Rosniza Hussin ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Film Growth ◽  
Atomic Layer ◽  
Titanium Isopropoxide ◽  
Steel Plates ◽  
Important Material ◽  
Glass Slides ◽  
Layer Deposition

Ceramic oxide thin films are an important material, with applications in many areas of science and technology. Titanium oxide (TiO2) is also a well-known and important material for applications such as gas sensors [1], photocatalysis materials [3], and electrochemicals [1], due to its self-cleaning [2], good corrosion resistance and biocompatibility. Atomic Layer Deposition (ALD) is a nanotechnology tool that is used for the deposition of nanostructured thin films. The unique advantage of ALD is the self-limiting film growth mechanism, which offers attractive properties, simple and accurate film thickness control, sharp interfaces, uniformity over large areas, excellent conformality, good reproducibility, a multilayer processing capability, and high quality films at low temperatures [3, 4]. TiO2 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to study the effect of substrates on the growth of TiO2. In order to achieve the desired advantages of using TTIP, a series of experiments were performed to study the growth mechanism of TiO2 thin films using TTIP and H2O by ALD.

Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

2021 ◽  
Vol 3 (2) ◽  
pp. 999-1005
Author(s):  
Hyeok Jae Lee ◽  
Jin Ha Hwang ◽  
Ji-Yong Park ◽  
Sang Woon Lee
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Reaction Route ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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